A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

This paper presents a noncharge-sheet channel potential and drain current model for long-channel dynamic-depletion (DD) silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs). Based on the Poisson-Boltzmann equation, an analytical solution of the channel potentials in the front, back silicon/oxide and substrate/oxide interfaces is developed. It is a universal solution which predicts the channel potential accurately in all cases from accumulation to strong inversion. A unified noncharge-sheet drain current expression is derived from the three-interface analysis based on the universal channel potential solution. The proposed model shows excellent agreements with two-dimensional numerical simulations with varying geometrical structures at different device operation regions. This model provides a useful tool to study the device physics and develop a complete compact model for DD SOI MOSFET. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3319656]http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000275657500123&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Physics, AppliedSCI(E)EI2ARTICLE5null10