By using first-principles calculations and classical image force model, we studied the image force induced Schottky barrier (SB) height reduction in carbon nanotube (CNT)-metal contact. A low dielectric constant leads to a stronger band bending and therefore strongly reduces the SB height. This reduction depends on carrier concentration and CNT diameter. For CNT with carrier concentration of 10(20) cm(-3), the reduction in SB height caused by image force is up to 0.7 eV when CNT diameter is less than 20 angstrom. Our results demonstrate that image force induced SB height reduction is important for the design of CNT-based nanoelectronic devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4705300]http://gateway.webof...
The paper addresses the issue of Schottky barrier effects in carbon Nanotube field effect transistor...
The properties of the contacts between single-walled carbon nanotubes (SWNTs) and Au electrodes are ...
This paper discusses the electrical and structural characterization of 150 nm diameter contacts fill...
Schottky barrier (SB) formation at the contact interface between metal and semiconducting carbon nan...
Single-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave as Schottky ...
Semiconducting carbon nanotubes (CNTs) have several properties that are advantageous for field effec...
Single-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave as Schottky ...
Direct measurements are presented of the Schottky barrier (SB) heights of carbon nanotubedevices con...
We have fabricated electrical devices based on thermal chemical vapor deposition (TCVD) grown single...
Carbon nanotube (CNT) is an ideal candidate for future nanoelectronics because of its small diameter...
* Abstract- Carbon nanotube (CNT) is an ideal candidate for future nanoelectronics because of its sm...
Multi-walled carbon nanotubes (MWCNTs) show an oscillation in electrical resistance (from I–V measur...
Carbon nanotube (CNT) is found to be an amazing material for nanotelectronics due to its unique prop...
Graduation date: 2017CNTs also offer new opportunities to study new science and develop new technolo...
The high contact resistance of carbon nanotubes (CNTs) with metal is one key factor that retards the...
The paper addresses the issue of Schottky barrier effects in carbon Nanotube field effect transistor...
The properties of the contacts between single-walled carbon nanotubes (SWNTs) and Au electrodes are ...
This paper discusses the electrical and structural characterization of 150 nm diameter contacts fill...
Schottky barrier (SB) formation at the contact interface between metal and semiconducting carbon nan...
Single-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave as Schottky ...
Semiconducting carbon nanotubes (CNTs) have several properties that are advantageous for field effec...
Single-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave as Schottky ...
Direct measurements are presented of the Schottky barrier (SB) heights of carbon nanotubedevices con...
We have fabricated electrical devices based on thermal chemical vapor deposition (TCVD) grown single...
Carbon nanotube (CNT) is an ideal candidate for future nanoelectronics because of its small diameter...
* Abstract- Carbon nanotube (CNT) is an ideal candidate for future nanoelectronics because of its sm...
Multi-walled carbon nanotubes (MWCNTs) show an oscillation in electrical resistance (from I–V measur...
Carbon nanotube (CNT) is found to be an amazing material for nanotelectronics due to its unique prop...
Graduation date: 2017CNTs also offer new opportunities to study new science and develop new technolo...
The high contact resistance of carbon nanotubes (CNTs) with metal is one key factor that retards the...
The paper addresses the issue of Schottky barrier effects in carbon Nanotube field effect transistor...
The properties of the contacts between single-walled carbon nanotubes (SWNTs) and Au electrodes are ...
This paper discusses the electrical and structural characterization of 150 nm diameter contacts fill...