A semi-empirical analytical method called as the equivalent junction transformation has been proposed in this paper for the first time, and used to predict the breakdown characteristics of curved-abrupt P-N junctions. Based on this method, the effects of the radius of curvature of the metallurgical junction and the background doping concentration on the breakdown voltage, peak electrical field and depletion layer width at breakdown for cylindrical- and spherical-abrupt junctions are discussed in detail. All analytical results have shown in excellent agreement with the numerical analysis, showing the validity of the method presented here. (C) 2000 Elsevier Science Ltd. All rights reserved.http://gateway.webofknowledge.com/gateway/Gateway.cgi...
Applying the definition of p-n junction capacitance [1], which takes into account the effect of carr...
We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structu...
An inductive behaviour observed in germanium p-n junctions in the breakdown region is reported
In this brief, an equivalent junction method is proposed to study three-dimensional (3-D) effect of ...
This paper describes a new analytical method called the equivalent doping profile of a composite p-n...
This report describes an equivalent doping profile transformation method with which the avalanche br...
An analytical model for the electric field distribution of positively beveled abrupt p-n junctions i...
A semi-theoretical relationship is presented between the breakdown voltage of the field plate edge a...
This communication describes the voltage‐current characteristics in the breakdown region of p‐n jun...
For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending...
The existence of an inversion layer near the metallurgical junction of abrupt asymmetrical /b p/-/b ...
基于等价掺杂转换理论的应用,得到了解析计算非对称线性缓变P-N结击穿特性.由于非对称线性缓变P-N结是单扩散P-N结的一个恰当近似,因而,研究其击穿特性可以更好地理解和设计功率器件P-N结的终端结构....
The V-I characteristic of a p-n junction under breakdown is calculated taking the thermally generate...
An analytical model of the three-dimensional (3-D) effect due to the lateral radius of the main junc...
A new, analytical method is presented for calculating the depletion-region recombination current for...
Applying the definition of p-n junction capacitance [1], which takes into account the effect of carr...
We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structu...
An inductive behaviour observed in germanium p-n junctions in the breakdown region is reported
In this brief, an equivalent junction method is proposed to study three-dimensional (3-D) effect of ...
This paper describes a new analytical method called the equivalent doping profile of a composite p-n...
This report describes an equivalent doping profile transformation method with which the avalanche br...
An analytical model for the electric field distribution of positively beveled abrupt p-n junctions i...
A semi-theoretical relationship is presented between the breakdown voltage of the field plate edge a...
This communication describes the voltage‐current characteristics in the breakdown region of p‐n jun...
For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending...
The existence of an inversion layer near the metallurgical junction of abrupt asymmetrical /b p/-/b ...
基于等价掺杂转换理论的应用,得到了解析计算非对称线性缓变P-N结击穿特性.由于非对称线性缓变P-N结是单扩散P-N结的一个恰当近似,因而,研究其击穿特性可以更好地理解和设计功率器件P-N结的终端结构....
The V-I characteristic of a p-n junction under breakdown is calculated taking the thermally generate...
An analytical model of the three-dimensional (3-D) effect due to the lateral radius of the main junc...
A new, analytical method is presented for calculating the depletion-region recombination current for...
Applying the definition of p-n junction capacitance [1], which takes into account the effect of carr...
We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structu...
An inductive behaviour observed in germanium p-n junctions in the breakdown region is reported