We have developed a novel (silicon-on-insulator (SOI), microelectromechanical systems (MEMS)) SOI-MEMS technology combined with anodic bonding process. A metal layer on the glass substrate can provide out-of-plane electrodes and interconnects. More importantly, a wafer-level package of mechanical structures constructed by the top layer of the SOI wafer can be formed by the glass substrate and the substrate layer of the SOI wafer simultaneously. The package can protect fragile mechanical structures during post-release processes, such as dicing, mounting and wire bonding as an ordinary IC wafer. In addition, the wafer-level package can directly provide a specialized package, such as a vacuum package for gyroscopes. No special process other th...
We report a relatively low temperature (< 400 degrees C) hybrid wafer bonding process that results i...
[[abstract]]This study presents a novel system architecture to implement silicon-on-glass (SOG) MEMS...
This paper reports a process for the formation of very high quality single-crystal silicon films on ...
[[abstract]]Packaging is an emerging technology for microsystem integration. The silicon-on-insulato...
IEEEThis paper introduces a novel, inherently simple, and all-silicon wafer-level fabrication and he...
This paper presents a novel, inherently simple and low-cost fabrication and hermetic packaging metho...
This paper provides a method for the anodic bonding of SOI and glass wafers, and it explains the bon...
The article deals with a novel laboratory anodic bonding device. This device is used for MEMS creati...
The development of electronic and micro-mechanical components has been characterised by a constant i...
This paper gives an overview about possibilities for wafer level encapsulation of surface micromachi...
A wafer-level packaging method for SOI-MEMS structures that are desired to be encapsulated in a herm...
In the semiconductor device, the thick film SOI structure can separate various devices by dielectric...
In this paper, a high performance wafer-level vacuum packaging technology based on GSG triple-layer ...
A microelectric process technology has been developed to allow the fabrication of high-quality, unif...
We report a relatively low temperature (< 400 degrees C) hybrid wafer bonding process that results i...
We report a relatively low temperature (< 400 degrees C) hybrid wafer bonding process that results i...
[[abstract]]This study presents a novel system architecture to implement silicon-on-glass (SOG) MEMS...
This paper reports a process for the formation of very high quality single-crystal silicon films on ...
[[abstract]]Packaging is an emerging technology for microsystem integration. The silicon-on-insulato...
IEEEThis paper introduces a novel, inherently simple, and all-silicon wafer-level fabrication and he...
This paper presents a novel, inherently simple and low-cost fabrication and hermetic packaging metho...
This paper provides a method for the anodic bonding of SOI and glass wafers, and it explains the bon...
The article deals with a novel laboratory anodic bonding device. This device is used for MEMS creati...
The development of electronic and micro-mechanical components has been characterised by a constant i...
This paper gives an overview about possibilities for wafer level encapsulation of surface micromachi...
A wafer-level packaging method for SOI-MEMS structures that are desired to be encapsulated in a herm...
In the semiconductor device, the thick film SOI structure can separate various devices by dielectric...
In this paper, a high performance wafer-level vacuum packaging technology based on GSG triple-layer ...
A microelectric process technology has been developed to allow the fabrication of high-quality, unif...
We report a relatively low temperature (< 400 degrees C) hybrid wafer bonding process that results i...
We report a relatively low temperature (< 400 degrees C) hybrid wafer bonding process that results i...
[[abstract]]This study presents a novel system architecture to implement silicon-on-glass (SOG) MEMS...
This paper reports a process for the formation of very high quality single-crystal silicon films on ...