New method for extraction of MOSFET parameters

A new method for the extraction of the MOSFET parameters is presented in this letter. The method, which relies on combining drain current and output conductance characteristics, enables reliable values of the threshold voltage V-th, mobility mu(o) and the mobility attenuation coefficient theta to be obtained. Extracted results have been shown in good agreement with that of the second-derivative method, showing validity of our presented method.Engineering, Electrical & ElectronicSCI(E)EI5ARTICLE12597-5992