Current-voltage measurements show that C60/n-GaN, C70/n-GaN and C70/p-GaN contacts have very good rectification characteristics, however, the polarities of the forward biases for C60/n-GaN (C70/n-GaN) and C70/p-GaN are opposite to each other. By fitting forward current-voltage data, the relations of both the series resistance and ideality factor vs forward bias for C60/n-GaN and C70/n-GaN have been obtained. Thermal activation measurements at a fixed forward bias reveal exponential relations of currents vs the reciprocal of temperature. The effective barrier heights for C60/n-GaN and C70/n-GaN are determined to be 0.535 and 0.431 eV, respectively.EI03555-5584
We focus in this paper on the optimum room temperature (I-V) characteristics obtained by using conta...
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We focus in this paper on the optimum room temperature (I-V) characteristics obtained by using conta...
Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V...
The structural properties and electrical conduction mechanisms of p-type amorphous GaN1−xAsx/n-type ...
C60/n-GaN contacts have been fabricated by depositing solid C60 on n-GaN films, and their electrical...
The electrical properties of the heterojunction of solid C60/n-type GaAs were studied. The results o...
Solid C70/GaAs contacts were fabricated by vacuum deposition of solid C70 films on the n-type and p-...
Abstract The forward current–voltage (I–V) characteristics of n-GaN films on sapphire substrate are ...
The electrical properties of metal-GaN heterostructures due to the defects and nanoscale surface inh...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
Abstract. GaN films are prepared by MOCVD method on a sapphire substrate. The sample is n-type an se...
International audienceThe electrical response of gallium nitride (GaN), produced through metal–organ...
In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibit...
In recent years, a significant progress has been made in the development of III-V Nitrides based dev...
Electrical properties of n-ZnO/n-GaN isotype heterostructures obtained by rf-sputtering of ZnO films...
Solid C60/GaAs contacts were fabricated by growing solid C60 films on both n-type and p-type GaAs(10...
We focus in this paper on the optimum room temperature (I-V) characteristics obtained by using conta...
Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V...
The structural properties and electrical conduction mechanisms of p-type amorphous GaN1−xAsx/n-type ...