Epitaxial lateral overgrowth of InGaN/GaN multiple quantum wells on HVPE GaN template

In this study, epitaxial lateral overgrowth (ELOG) on different kinds of patterned hydride vapour phase epitaxy (HVPE) templates was successfully realized by metal organic chemical vapor deposition (MOCVD). InGaN/GaN MQWs were also grown and LED chips were then fabricated. The properties of the wafers and the performance of the LED chips were investigated. The experiment results showed obvious improvement of surface and crystal qualities of the wafers. LED chips also exhibited better luminous properties. Therefore ELOG method is a very effective way to improve crystal quality and oxygen plasma treatment is useful for surface optimization. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimCrystallographyPhysics, AppliedEICPCI-S(ISTP)