The crystallographic relationship of heteroepitaxial diamond films on scratched silicon substrates

By using the straight hot filament chemical vapor deposition method with one falt horizontal filament, diamond films were rapidly grown on a scratched silicon substrate. Observing two kinds of interface structures of the samples by cross-section high-resolution transmission electron microscopy, we found that diamond{111}-oriented films are epitaxially grown on beta-SiC{111} planes with a tilt angle of about 7 degrees around the common [110] axis. We also found that diamond{711} planes are parallel to silicon{111} planes on which diamonds are directly epitaxially grown on silicon substrate. The interface dislocations are of either 60 degrees-type or Schockley partial dislocation in relation to our observations. (C) 1997 Elsevier Science S.A.Materials Science, MultidisciplinarySCI(E)EI6ARTICLE121836-1840