Zero-field spin splitting in AlxGa1-xN/GaN heterostructures with various Al compositions

The zero-field spin splitting in AlxGa1-xN/GaN heterostructures with various Al compositions has been investigated at low temperatures and high magnetic fields. The zero-field spin-splitting energy and the spin-orbit coupling parameter are obtained by means of beating pattern Shubnikov-de Haas measurements. It is found that the spin-orbit coupling parameter can be tuned by the polarization-induced electric field. The AlxGa1-xN/GaN heterostructure is one of the promising materials for the spin-polarized field effect transistor. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3012361]http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000260571800044&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Physics, AppliedSCI(E)EI9ARTICLE17null9