Gate tunable photoconductivity of p-channel Se nanowire field effect transistors

We have investigated the photoelectrical properties of p-type selenium nanowire field effect transistors. The hole concentrations are estimated to be 4.1 x 10(17) and 2.5 x 10(18) cm(-3) for the device under dark and illumination, respectively. The photoelectrical on/off ratio can be tunable from 4 to 160 as the gate voltage decreases from 20 to -20 V. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3216846]Physics, AppliedSCI(E)EI11ARTICLE9null9