Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor Phase Epitaxy
- Tao, Y. B.
- Yu, T. J.
- Yang, Z. Y.
- Ling, D.
- Wang, Y.
- Chen, Z. Z.
- Yang, Z. J.
- Zhang, G. Y.
DOIAbstract
In this paper, three GaN epilayers grown on commercially available cone-patterned sapphire substrates (PSS) by Metal Organic Vapor Phase Epitaxy (MOVPE) were investigated. Voltage dependence of monochromatic cathodoluminescence (CL) was applied to investigate the threading dislocation (TD) behaviors. Fewer TDs were observed in CL images when the penetration depth of electron was made shorter by altering the acceleration voltage from 30 to 5 kV. It was shown that many TDs were generated on the peaks of the cones, in-between cones, and in the coalescence regions, while there was almost no TD above the slopes of the cones. When the growth pressure was changed from 200 to 100 Torn during the final stage, fewer TDs were observed in CL images, an...
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