Precise relationship between voltage and frequency at the appearance of negative capacitance in InGaN diodes

Feng, L. F.
Li, Y.
Li, D.
Hu, X. D.
Yang, W.
Wang, C. D.
Xing, Q. Y.

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Publication date

January 2012

DOI

10.1063/1.4769807

Publisher

应用物理学快报

ISSN

0003-6951

Journal

issn:0003-6951

Citation count (estimate)

Abstract

The exact relationship between voltage and frequency when negative capacitance (NC) appears in light-emitting diodes containing InGaN was determined both experimentally and by solving the physical equations for the complete equivalent circuit of a symmetrical p-n junction combined with its boundary condition. Results from the calculation revealed that NC depends on the recombination lifetime of carriers; therefore, we can accurately determine recombination lifetime from the appearance of NC. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769807]Physics, AppliedSCI(E)EI4ARTICLE23null10

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Precise relationship between voltage and frequency at the appearance of negative capacitance in InGaN diodes

Abstract

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Precise relationship between voltage and frequency at the appearance of negative capacitance in InGaN diodes

Abstract

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