We studied the practicable alleviation of efficiency droop effect in GaN-based light emitting diodes (LEDs) with surface plasmon (SP) coupling. Our approach is based on a simple ABC model which is extended by a Purcell factor that relates the SP coupling rate to the radiative recombination rate based on Fermi's golden rule. Purcell factors as small as two are found to be sufficient to obtain a low efficiency droop of only 5.2% at a current density of 200 A/cm(2). It is shown that a high probability of photon extraction from the SP modes is required for enhanced light output power. SP coupling is more beneficial to improve LED performance within the "green-yellow gap" suffering from low luminescence efficiency (less than 20%)....
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perp...
In this study low temperature and high pressure techniques have been used to investigate the recombi...
We experimentally demonstrate the 1.5-fold enhancement of the electroluminescence (EL) of surface-pl...
Blue-green light-emitting diodes improve efficiencies by 25–120%. Although tremendous progress has b...
Ag coated microgroove with extreme large aspect-ratio of 500:1 was fabricated on p-GaN capping layer...
We propose an optimal design for enhancing the external quantum efficiency of InGaN/GaN LEDs operati...
Efficiency droop, i.e. the loss of efficiency at high operating current, afflicts nitride-based ligh...
GaN LEDs suffer from the efficiency droop, limiting their use in applications like general lighting ...
[[abstract]]The physical mechanisms leading to the efficiency droop of InGaN/GaN light-emitting diod...
High modulation speed of light-emitting diodes (LEDs) is of primary importance for applications in o...
The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs)...
In this study low temperature and high pressure techniques have been used to investigate the recombi...
GaN-based light-emitting devices (LEDs) with different electron blocking layers are theoretically st...
The extraction of light from current light emitting diodes (LEDs) is very low due to the large index...
In InGaN quantum wells (QWs), effective active volume can be greatly reduced due to carrier localiza...
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perp...
In this study low temperature and high pressure techniques have been used to investigate the recombi...
We experimentally demonstrate the 1.5-fold enhancement of the electroluminescence (EL) of surface-pl...
Blue-green light-emitting diodes improve efficiencies by 25–120%. Although tremendous progress has b...
Ag coated microgroove with extreme large aspect-ratio of 500:1 was fabricated on p-GaN capping layer...
We propose an optimal design for enhancing the external quantum efficiency of InGaN/GaN LEDs operati...
Efficiency droop, i.e. the loss of efficiency at high operating current, afflicts nitride-based ligh...
GaN LEDs suffer from the efficiency droop, limiting their use in applications like general lighting ...
[[abstract]]The physical mechanisms leading to the efficiency droop of InGaN/GaN light-emitting diod...
High modulation speed of light-emitting diodes (LEDs) is of primary importance for applications in o...
The photoluminescence (PL) intensity enhancement and suppression mechanism on surface plasmons (SPs)...
In this study low temperature and high pressure techniques have been used to investigate the recombi...
GaN-based light-emitting devices (LEDs) with different electron blocking layers are theoretically st...
The extraction of light from current light emitting diodes (LEDs) is very low due to the large index...
In InGaN quantum wells (QWs), effective active volume can be greatly reduced due to carrier localiza...
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perp...
In this study low temperature and high pressure techniques have been used to investigate the recombi...
We experimentally demonstrate the 1.5-fold enhancement of the electroluminescence (EL) of surface-pl...