DOIAbstract
Systematic investigations are performed on a set of AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition on sapphire (0001). The Al composition x is determined by Rutherford backscattering. By using high resolution x-ray diffraction and the channeling scan around an off-normal. < 1 (2) over bar 13 > axis in {10 (1) over bar0} plane of the AlGaN layer, the tetragonal distortion e(T) caused by the elastic strain in the epilayer is determined. The results show that e(T) in the high-quality AlGaN layers is dramatically influenced by the Al content.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000345156100022&DestLinkType=FullRecord&DestApp=ALL_WOS&...
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