应用Mg离子注入MOCVD法生长掺杂Mg的GaN中 ,在经过800?℃,1?h的退火后,获得高空穴载流子浓度(8.28×1017?cm -3)的P-型GaN.首次报道了实验上通过Mg离子注入到Mg生长掺杂的GaN中并获得高的表面空穴载流子浓度.国家自然科学基金中文核心期刊要目总览(PKU)中国科学引文数据库(CSCD)05701-7043
The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain repr...
The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain repr...
[[abstract]]在本次研究中，利用硫化銨 ((NH4) 2Sx) 溶液進行N型氮化鎵 (GaN) 表面處理，於蒸鍍鈦/鋁 (Ti/Al) 金屬後即形成特徵接觸電阻值5.0×10-5 Ω-cm2...
研究了离子注入对金属有机化学气相淀积法生长的Mg掺杂GaN性质的影响.样品在800℃退火1小时后,我们获得了空穴浓度达8.28×1017cm-3的p型 GaN.这一结果可以用于GaN...
在用MOCVD方法生长的p-GaN薄膜中注入Mg离子,然后在N2气氛下在850～1150℃之间快速退火,研究了Mg+离子注入后样品退火前后的结构、光学和电学性质.结果表明,离子注入使GaN晶体沿着a轴...
Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The ...
本文对p-GaN/Au的接触电阻率进行了研究.用沸腾的王水处理p-GaN表面后,p-GaN/Au可直接形成电阻率为0.045Ω·cm2的欧姆接触.接触电阻率测试和I-V特性曲线测试表...
通过优化Mg流晕增强了MoCVD生长的GaN薄膜的p型电导并改善了晶体质量.Hall测量结果表明卒穴浓度首先随着Mg流量的升高而升高,达到极大值后开始降低;迁移率始终随Mg流量的升高而降低.最优的样品...
在蓝宝石衬底上通过金属有机物化学气相沉积(metal-organic chemical vapor deposition,MOCVD)方法外延生长的GaN薄膜具有良好的结晶品质,χmin达到2·00%...
Les problématiques d’économie d’énergie et de diminution des pertes illustrent les limites du Si dan...
用不同电荷态的126Xeq+离子（9≤q≤30）在室温下轰击GaN晶体表面，经原子力显微镜分析表明，当q>18，辐照区域由隆起转为显著的刻蚀.被轰击后的GaN晶体表面形貌主要取决于入...
The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain repr...
The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a ...
Abstract Inefficient Mg-induced p-type doping has been remained a major obstacle in the development ...
Mg+ and Mg++P+ were introduced into GaN by ion implantation. The structure and crystalline quality o...
The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain repr...
The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain repr...
[[abstract]]在本次研究中，利用硫化銨 ((NH4) 2Sx) 溶液進行N型氮化鎵 (GaN) 表面處理，於蒸鍍鈦/鋁 (Ti/Al) 金屬後即形成特徵接觸電阻值5.0×10-5 Ω-cm2...
研究了离子注入对金属有机化学气相淀积法生长的Mg掺杂GaN性质的影响.样品在800℃退火1小时后,我们获得了空穴浓度达8.28×1017cm-3的p型 GaN.这一结果可以用于GaN...
在用MOCVD方法生长的p-GaN薄膜中注入Mg离子,然后在N2气氛下在850～1150℃之间快速退火,研究了Mg+离子注入后样品退火前后的结构、光学和电学性质.结果表明,离子注入使GaN晶体沿着a轴...
Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition (MOCVD). The ...
本文对p-GaN/Au的接触电阻率进行了研究.用沸腾的王水处理p-GaN表面后,p-GaN/Au可直接形成电阻率为0.045Ω·cm2的欧姆接触.接触电阻率测试和I-V特性曲线测试表...
通过优化Mg流晕增强了MoCVD生长的GaN薄膜的p型电导并改善了晶体质量.Hall测量结果表明卒穴浓度首先随着Mg流量的升高而升高,达到极大值后开始降低;迁移率始终随Mg流量的升高而降低.最优的样品...
在蓝宝石衬底上通过金属有机物化学气相沉积(metal-organic chemical vapor deposition,MOCVD)方法外延生长的GaN薄膜具有良好的结晶品质,χmin达到2·00%...
Les problématiques d’économie d’énergie et de diminution des pertes illustrent les limites du Si dan...
用不同电荷态的126Xeq+离子（9≤q≤30）在室温下轰击GaN晶体表面，经原子力显微镜分析表明，当q>18，辐照区域由隆起转为显著的刻蚀.被轰击后的GaN晶体表面形貌主要取决于入...
The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain repr...
The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a ...
Abstract Inefficient Mg-induced p-type doping has been remained a major obstacle in the development ...
Mg+ and Mg++P+ were introduced into GaN by ion implantation. The structure and crystalline quality o...
The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain repr...
The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain repr...
[[abstract]]在本次研究中，利用硫化銨 ((NH4) 2Sx) 溶液進行N型氮化鎵 (GaN) 表面處理，於蒸鍍鈦/鋁 (Ti/Al) 金屬後即形成特徵接觸電阻值5.0×10-5 Ω-cm2...
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