Effect of Neutral Traps on Tunneling Current and SILC in Ultrathin Oxide Layer

用数值分析的方法讨论了中性陷阱对超薄场效应晶体管(MOSFET )隧穿电流的影响.中性陷阱引起势垒的变化在二氧化硅的导带中形成一个方形的势阱.对于不同的势垒变化,计算了电子隧穿氧化层厚度为4nm的超薄金属氧化物半导体结构的电流.结果表明,中性陷阱对隧穿电流的影响不能被忽略,中性陷阱的存在使隧穿电流增加,并且通过这个简单的模型能够理解应变诱导漏电流的产生机制.The effect of neutral trap on tunneling current in ultrathin MOSFETs is investigated by numerical analysis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the conduction band of SiO2.The different barrier variation of an ultrathin metal-oxide-semiconductor(MOS) structure with oxide thickness of 4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling current can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple model can be used to understand the occurring mechanism of stress induced leakage current.国家重点基础研究发展计划(973计划); 高等学校博士学科点专项科研项目中文核心期刊要目总览(PKU)中国科学引文数据库(CSCD)