Nouvelles approches d'utilisation de la spectroscopie de photoélectrons à rayons X (XPS) pour le développement et le contrôle des technologies FDSOI avancées

The downscaling and the increasing complexity of integrated circuits is one of the microelectronics industry development axes. To insure the transistor performances, a precise mastering of thickness, crystalline structure and composition, notably the nitrogen dose, is mandatory for each stack layer. Yet, this complex architecture arises new challenges for metrology. Indeed, with the alternation of very thin films, conventional metrology techniques, based on volume measurements, are difficult to implement. This is why, an increasing use of X-rays techniques can be noticed, such as X-ray photoelectron spectroscopy (XPS); a well-established method for the quantitative thickness and chemical composition study of ultrathin films (