International audienceThe dielectric properties of Ba1-xCaxTi1-xZrxO3 (BCTZ) thin films are explored by varying x from 0 to 0.18 through an RF magnetron co-sputtering process. Thin films are analyzed by Rutherford Backscattering Spectroscopy, X-Ray Diffraction and dielectric measurements on parallel plate capacitors as a function of temperature (from 100 to 420 K), frequency (from 100 Hz to 1 MHz) and static electric field (from 0 to 250 kV cm−1). The evolutions of their dielectric properties with composition are systematically compared to bulk ceramic counterparts. In both cases, a continuous crossover from classical-to-relaxor ferroelectric behavior along with a decrease of the temperature of the permittivity maximum are observed as x inc...
749-753Barium zirconium titanate thin films are attractive candidates for dynamic random access memo...
Thin films of Ba(Ti,Zr)O3 containing about 65% Zr have been grown using rf magnetron sputtering with...
Thin films derived from the ferroelectric material BaTiO3 have a great importance in the processing ...
International audienceThe dielectric properties of Ba1-xCaxTi1-xZrxO3 (BCTZ) thin films are explored...
The dielectric properties of Ba1-xCaxTi1-xZrxO3 (BCTZ) thin films are explored by varying x from 0 t...
International audienceThe dielectric properties of Ba1-xCaxTi1-xZrxO3 (BCTZ) thin films are explored...
International audienceTunable ferroelectric capacitors, which exhibit a decrease in the dielectric p...
International audienceTunable ferroelectric capacitors, which exhibit a decrease in the dielectric p...
Tunable ferroelectric capacitors, which exhibit a decrease in the dielectric permittivity under an e...
International audienceTunable ferroelectric capacitors, which exhibit a decrease of the dielectric p...
International audienceTunable ferroelectric capacitors, which exhibit a decrease of the dielectric p...
Tunable ferroelectric capacitors, which exhibit a decrease in the dielectric permittivity under an e...
Tunable ferroelectric capacitors, which exhibit a decrease of the dielectric permittivity (ϵ) under ...
Tunable ferroelectric capacitors, which exhibit a decrease of the dielectric permittivity (ϵ) under ...
Epitaxial BaZrxTi1-xO3 (BZT) thin films with a Zr content between x=0 and x=0.3 are grown by pulsed ...
749-753Barium zirconium titanate thin films are attractive candidates for dynamic random access memo...
Thin films of Ba(Ti,Zr)O3 containing about 65% Zr have been grown using rf magnetron sputtering with...
Thin films derived from the ferroelectric material BaTiO3 have a great importance in the processing ...
International audienceThe dielectric properties of Ba1-xCaxTi1-xZrxO3 (BCTZ) thin films are explored...
The dielectric properties of Ba1-xCaxTi1-xZrxO3 (BCTZ) thin films are explored by varying x from 0 t...
International audienceThe dielectric properties of Ba1-xCaxTi1-xZrxO3 (BCTZ) thin films are explored...
International audienceTunable ferroelectric capacitors, which exhibit a decrease in the dielectric p...
International audienceTunable ferroelectric capacitors, which exhibit a decrease in the dielectric p...
Tunable ferroelectric capacitors, which exhibit a decrease in the dielectric permittivity under an e...
International audienceTunable ferroelectric capacitors, which exhibit a decrease of the dielectric p...
International audienceTunable ferroelectric capacitors, which exhibit a decrease of the dielectric p...
Tunable ferroelectric capacitors, which exhibit a decrease in the dielectric permittivity under an e...
Tunable ferroelectric capacitors, which exhibit a decrease of the dielectric permittivity (ϵ) under ...
Tunable ferroelectric capacitors, which exhibit a decrease of the dielectric permittivity (ϵ) under ...
Epitaxial BaZrxTi1-xO3 (BZT) thin films with a Zr content between x=0 and x=0.3 are grown by pulsed ...
749-753Barium zirconium titanate thin films are attractive candidates for dynamic random access memo...
Thin films of Ba(Ti,Zr)O3 containing about 65% Zr have been grown using rf magnetron sputtering with...
Thin films derived from the ferroelectric material BaTiO3 have a great importance in the processing ...