We present noise measurements of self-assembled InAs quantum dots at high magnetic field. In comparison to I-V characteristics at zero magnetic field, we notice a strong current overshoot that is due to a Fermi-edge singularity. We observe an enhanced suppression in the shot noise power simultaneous to the current overshoot that is attributed to the electron-electron interaction at the Fermi-edge singularity. © 2007 The American Physical Society
A self-assembled quantum dot confines both electrons and holes to a nano-sized region inside a semic...
We consider in this work many-body enhanced electron tunneling through an InAs quantum dot in a magn...
Electrons in InAs/GaAs quantum dots are strong candidates for qubits due to quantum confinement of t...
We apply an external bias voltage to vertically coupled self-assembled InAs quantum dots. We observe...
We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assem...
We study the Fermi-edge singularity appearing in the current-voltage characteristics for resonant tu...
Current steps attributed to resonant tunneling through individual InAs quantum dots embedded in a Ga...
Studies of non-equilibrium current fluctuations enable assessing correlations involved in quantum tr...
In this work we explore the noise characteristics in lithographically-defined two terminal devices c...
We measure tunnelling currents through electrostatically defined quantum dots in a GaAs/AlGaAs heter...
In this work we explore the noise characteristics in lithographically-defined two terminal devices c...
We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-A...
We examine the dynamical properties of resonant tunneling through single InAs quantum dots by measur...
We consider electron tunneling spectroscopy through an InAs quantum dot in a magnetic field applied ...
4 pages, 2 figures, to be published in Phys. Rev. Lett. (revised version)International audienceThe c...
A self-assembled quantum dot confines both electrons and holes to a nano-sized region inside a semic...
We consider in this work many-body enhanced electron tunneling through an InAs quantum dot in a magn...
Electrons in InAs/GaAs quantum dots are strong candidates for qubits due to quantum confinement of t...
We apply an external bias voltage to vertically coupled self-assembled InAs quantum dots. We observe...
We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assem...
We study the Fermi-edge singularity appearing in the current-voltage characteristics for resonant tu...
Current steps attributed to resonant tunneling through individual InAs quantum dots embedded in a Ga...
Studies of non-equilibrium current fluctuations enable assessing correlations involved in quantum tr...
In this work we explore the noise characteristics in lithographically-defined two terminal devices c...
We measure tunnelling currents through electrostatically defined quantum dots in a GaAs/AlGaAs heter...
In this work we explore the noise characteristics in lithographically-defined two terminal devices c...
We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-A...
We examine the dynamical properties of resonant tunneling through single InAs quantum dots by measur...
We consider electron tunneling spectroscopy through an InAs quantum dot in a magnetic field applied ...
4 pages, 2 figures, to be published in Phys. Rev. Lett. (revised version)International audienceThe c...
A self-assembled quantum dot confines both electrons and holes to a nano-sized region inside a semic...
We consider in this work many-body enhanced electron tunneling through an InAs quantum dot in a magn...
Electrons in InAs/GaAs quantum dots are strong candidates for qubits due to quantum confinement of t...