The opening of a band gap due to compressive uniaxial strain renders bulk HgTe a strong three-dimensional topological insulator with protected gapless surface states at any surface. By employing a six-band k·p model, we determine the spin textures of the topological surface states of bulk HgTe uniaxially strained along the (100) direction. We show that at the (010) and (001) surfaces, an increase in the strain magnitude triggers a topological phase transition where the winding number of the surface-state spin texture is flipped while the four topological invariants characterizing the bulk band structure of the material are unchanged
Topological insulating materials with dissipationless surface states promise potential applications ...
We unraveled the strain-induced topological insulating behavior in Ge2Sb2Te5 (GST) by means of ab in...
We present a first-principles study of electronic properties of ultrathin films of topological insul...
The opening of a band gap due to compressive uniaxial strain renders bulk HgTe a strong three-dimens...
The opening of a band gap due to compressive uniaxial strain renders bulk HgTe a strong three-dimens...
The opening of a band gap due to compressive uniaxial strain renders bulk HgTe a strong three-dimens...
The topological surface states of mercury telluride (HgTe) are studied by ab initio calculations ass...
Topological insulators (TIs) are a new state of quantum matter that has fundamentally challenged our...
We present ab initio and k·p calculations of the spin texture on the Fermi surface of tensile-strain...
We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epi...
In search of materials with three-dimensional flat band dispersions, using ab initio computations we...
In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computati...
Topological insulator is a new state of matter which exhibits exotic surface electronic properties. ...
We revisit the problem of surface states in semiconductors with inverted-band structures, such as α-...
Since the discovery of topological insulators (TIs), there has been much research into prediction an...
Topological insulating materials with dissipationless surface states promise potential applications ...
We unraveled the strain-induced topological insulating behavior in Ge2Sb2Te5 (GST) by means of ab in...
We present a first-principles study of electronic properties of ultrathin films of topological insul...
The opening of a band gap due to compressive uniaxial strain renders bulk HgTe a strong three-dimens...
The opening of a band gap due to compressive uniaxial strain renders bulk HgTe a strong three-dimens...
The opening of a band gap due to compressive uniaxial strain renders bulk HgTe a strong three-dimens...
The topological surface states of mercury telluride (HgTe) are studied by ab initio calculations ass...
Topological insulators (TIs) are a new state of quantum matter that has fundamentally challenged our...
We present ab initio and k·p calculations of the spin texture on the Fermi surface of tensile-strain...
We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epi...
In search of materials with three-dimensional flat band dispersions, using ab initio computations we...
In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computati...
Topological insulator is a new state of matter which exhibits exotic surface electronic properties. ...
We revisit the problem of surface states in semiconductors with inverted-band structures, such as α-...
Since the discovery of topological insulators (TIs), there has been much research into prediction an...
Topological insulating materials with dissipationless surface states promise potential applications ...
We unraveled the strain-induced topological insulating behavior in Ge2Sb2Te5 (GST) by means of ab in...
We present a first-principles study of electronic properties of ultrathin films of topological insul...