Reduced threshold microdisk lasers from GeSn/SiGeSn heterostructures
- Stange, D.
- Von Den Driesch, N.
- Zabel, T.
- Armand-Pilon, F.
- Marzban, B.
- Rainko, D.
- Hartmann, J. -M.
- Capellini, G.
- Schroeder, T.
- Sigg, H.
- Witzens, J.
- Grutzmacher, D.
- Buca, D.
Publication date
January 2017
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
We present optically pumped lasing from group IV GeSn/SiGeSn heterostructures. A comparison between double heterostructure and multi-quantum-well microdisk cavities reveals advantages of the multi-well design. Strongly reduced lasing thresholds compared to values from bulk devices are observed
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