In most of the realistic ab initio and model calculations which have appeared on the emission of light from silicon nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si29 nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive character...
Density-functional and many body perturbation theory calculations have been carried out in order to ...
188-191A computer simulation using empirical pseudo-potential Hamiltonian has been performed to ex...
A first-principle investigation of the effects of multiple Si=O bonds at the surface of silicon-base...
Density-functional theory calculations have been carried out in order to study the structural, elect...
In this work we investigate, by first-principles calculations, the structural, electronic and optica...
We have extensively studied the effects of oxygen on the optoelectronics properties of various types...
Silicon quantum dots have a multitude of potential uses within the biomedical and optoelectronic ind...
The optoelectronic properties of Si nanodots have been investigated using ab initio total energy cal...
The aim of this work is to elucidate, through density functional calculations, the role of the Si\u2...
Substitutional group III and group V elements, though commonly used as shallow dopants in bulk silic...
The electronic and optical properties of hydrogenated silicon nanocrystals (H-Sinc) have been invest...
The authors model fully hydroxyl‐ (OH‐) and amino‐ (NH2‐) terminated silicon nanocrystals (Si‐NCs) b...
Total energy calculations within the Density Functional Theory have been carried out in order to inv...
Total energy calculations within the Density Functional Theory have been carried out in order to inv...
Total energy calculations within the Density Functional Theory have been carried out in order to inv...
Density-functional and many body perturbation theory calculations have been carried out in order to ...
188-191A computer simulation using empirical pseudo-potential Hamiltonian has been performed to ex...
A first-principle investigation of the effects of multiple Si=O bonds at the surface of silicon-base...
Density-functional theory calculations have been carried out in order to study the structural, elect...
In this work we investigate, by first-principles calculations, the structural, electronic and optica...
We have extensively studied the effects of oxygen on the optoelectronics properties of various types...
Silicon quantum dots have a multitude of potential uses within the biomedical and optoelectronic ind...
The optoelectronic properties of Si nanodots have been investigated using ab initio total energy cal...
The aim of this work is to elucidate, through density functional calculations, the role of the Si\u2...
Substitutional group III and group V elements, though commonly used as shallow dopants in bulk silic...
The electronic and optical properties of hydrogenated silicon nanocrystals (H-Sinc) have been invest...
The authors model fully hydroxyl‐ (OH‐) and amino‐ (NH2‐) terminated silicon nanocrystals (Si‐NCs) b...
Total energy calculations within the Density Functional Theory have been carried out in order to inv...
Total energy calculations within the Density Functional Theory have been carried out in order to inv...
Total energy calculations within the Density Functional Theory have been carried out in order to inv...
Density-functional and many body perturbation theory calculations have been carried out in order to ...
188-191A computer simulation using empirical pseudo-potential Hamiltonian has been performed to ex...
A first-principle investigation of the effects of multiple Si=O bonds at the surface of silicon-base...