Add to ORKGIn this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistor
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displaceme...
For future space missions that are visiting hostile electron radiation environments, such as ESA’s J...
This paper investigates the vulnerability of several micro and nano-electronic technologies to a mix...
The total ionizing dose response of fourteen IC types from eight manufacturers was measured using Co...
Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed wi...
Irradiation of several low power circuit elements by Co-60 gamma radiation, low and high energy elec...
The present design of the new space gamma-ray telescope GAMMA-400 for the energy range 50 MeV–3 TeV ...
We present the results of single event effects (SEE) testing and analysis investigating the effects ...
In 1972, when engineers at Hughes Aircraft Corporation discovered that errors in their satellite avi...
Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most ...
Influence of cobalt 60 gamma irradiation on bulk and surface recombination rates in n-type and p-typ...
The development of high-performance radiation detectors is essential for commercial, scientific, and...
This paper investigates the vulnerability of several micro- and nano-electronic technologies to a mi...
We present the results of single events effects (SEE) testing and analysis investigating the effects...
In this paper experimental results on radiation effects on a BICMOS high speed commercial technology...
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displaceme...
For future space missions that are visiting hostile electron radiation environments, such as ESA’s J...
This paper investigates the vulnerability of several micro and nano-electronic technologies to a mix...
The total ionizing dose response of fourteen IC types from eight manufacturers was measured using Co...
Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed wi...
Irradiation of several low power circuit elements by Co-60 gamma radiation, low and high energy elec...
The present design of the new space gamma-ray telescope GAMMA-400 for the energy range 50 MeV–3 TeV ...
We present the results of single event effects (SEE) testing and analysis investigating the effects ...
In 1972, when engineers at Hughes Aircraft Corporation discovered that errors in their satellite avi...
Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most ...
Influence of cobalt 60 gamma irradiation on bulk and surface recombination rates in n-type and p-typ...
The development of high-performance radiation detectors is essential for commercial, scientific, and...
This paper investigates the vulnerability of several micro- and nano-electronic technologies to a mi...
We present the results of single events effects (SEE) testing and analysis investigating the effects...
In this paper experimental results on radiation effects on a BICMOS high speed commercial technology...
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displaceme...
For future space missions that are visiting hostile electron radiation environments, such as ESA’s J...
This paper investigates the vulnerability of several micro and nano-electronic technologies to a mix...