Add to ORKGThis report describes more than 5000 hours of successful 500 C operation of semiconductor integrated circuits (ICs) with more than 100 transistors. Multiple packaged chips with two different 4H-SiC junction field effect transistor (JFET) technology demonstrator circuits have surpassed thousands of hours of oven-testing at 500 C. After 100 hours of 500 C burn-in, the circuits (except for 2 failures) exhibit less than 10% change in output characteristics for the remainder of 500 C testing. We also describe the observation of important differences in IC materials durability when subjected to the first nine constituents of Venus-surface atmosphere at 9.4 MPa and 460 C in comparison to what is observed for Earth-atmosphere oven testing at 500 C
While there have been numerous reports of short-term transistor operation at 500 degree C or above, ...
The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (J...
A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET)...
This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
This work describes recent progress in the design, processing, and testing of significantly up-scale...
This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
This work describes recent progress in the design, processing, upscaling, and testing of 500C durabl...
This paper updates the long-term 500 C electrical testing results from 6H-SiC junction field effect ...
The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits...
NASA has been developing very high temperature semiconductor integrated circuits for use in the hot ...
The fabrication and testing of the first semiconductor transistors and small-scale integrated circui...
We have reported SiC integrated circuits (ICs) with two levels of metal interconnect that have demon...
We have reported SiC integrated circuits (IC's) with two levels of metal interconnect that have demo...
Operational testing of prototype 4H-SiC JFET ICs across an unrivaled ambient temperature span in exc...
This ECSCRM 2016 submission presents further electrical testing and microscopic post-failure studies...
While there have been numerous reports of short-term transistor operation at 500 degree C or above, ...
The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (J...
A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET)...
This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
This work describes recent progress in the design, processing, and testing of significantly up-scale...
This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
This work describes recent progress in the design, processing, upscaling, and testing of 500C durabl...
This paper updates the long-term 500 C electrical testing results from 6H-SiC junction field effect ...
The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits...
NASA has been developing very high temperature semiconductor integrated circuits for use in the hot ...
The fabrication and testing of the first semiconductor transistors and small-scale integrated circui...
We have reported SiC integrated circuits (ICs) with two levels of metal interconnect that have demon...
We have reported SiC integrated circuits (IC's) with two levels of metal interconnect that have demo...
Operational testing of prototype 4H-SiC JFET ICs across an unrivaled ambient temperature span in exc...
This ECSCRM 2016 submission presents further electrical testing and microscopic post-failure studies...
While there have been numerous reports of short-term transistor operation at 500 degree C or above, ...
The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (J...
A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET)...