High-power InP-based waveguide integrated modified uni-traveling-carrier photodiodes
- Zhou, G.
- Runge, P.
- Keyvaninia, S.
- Seifert, S.
- Ebert, W.
- Mutschall, S.
- Seeger, A.
- Li, Q.L.
- Beling, A.
DOIAbstract
We demonstrate monolithic InP-based high-power high-speed waveguide integrated single and balanced modified UTC photodetectors. The single PD chip generates maximum RF output power levels of 8.9 dBm to 5.1 dBm in the frequency range between 60 GHz and 120 GHz. The balanced PD chip has a 3 dB-bandwidth of 80 GHz and generates 2 dBm RF output power at this frequency
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