Add to ORKGImprovements of the radio-frequency (rf) heating for Float Zone growth of silicon single crystals are presented. Details with respect to the shape and design of the rf-inductor are described. The specific growth parameters for 4" and 6" ingots are given and the required power consumption is discussed. The formation of spikes during the melting of the feed rod is set in relation to the frequency and temperature dependence of the skin-depth. The doping via the gas phase is explained and results for the absorption efficiency are presented
The contamination o.f a melt c aused by the material of the container is completely avoided by the f...
Nearly 90 percent of semiconductor devices are produced with Si single crystals as the starting mate...
The growth process of 2-inch silicon carbide (SiC) single crystals by the physical vapor transport m...
Float Zone growth of silicon crystals is known as the method for providing excellent material proper...
This article presents a direct measurement of the growth angle during the growth of a cylindrical 2 ...
Float zone refining using simultaneous RF induction heating and electromagnetic levitation has prove...
Energy Materials Research was organized in 1984. The specific objective of the company is to generat...
The crystal growth processes of the floating zone growth of silicon were investigated. The setting-u...
An analytical solution for the temperature distribution in freely radiating crystals has been develo...
Low temperature steady-state solution growth of silicon from indium on Si(001) substrates with a ver...
The floating zone (FZ) growth with the needle-eye inductor is a process with many coupled parameters...
We use a numerical optimization method to determine the control parameters frequency, power, and coi...
Fast and selective inductive heating of pre-sintered silver lines on silicon as present in solar cel...
Numerical analyses are conducted to investigate the combined heat transfer in ßoating zone growth of...
The design and development of equipment and processes to demonstrate continuous growth of crystals b...
The contamination o.f a melt c aused by the material of the container is completely avoided by the f...
Nearly 90 percent of semiconductor devices are produced with Si single crystals as the starting mate...
The growth process of 2-inch silicon carbide (SiC) single crystals by the physical vapor transport m...
Float Zone growth of silicon crystals is known as the method for providing excellent material proper...
This article presents a direct measurement of the growth angle during the growth of a cylindrical 2 ...
Float zone refining using simultaneous RF induction heating and electromagnetic levitation has prove...
Energy Materials Research was organized in 1984. The specific objective of the company is to generat...
The crystal growth processes of the floating zone growth of silicon were investigated. The setting-u...
An analytical solution for the temperature distribution in freely radiating crystals has been develo...
Low temperature steady-state solution growth of silicon from indium on Si(001) substrates with a ver...
The floating zone (FZ) growth with the needle-eye inductor is a process with many coupled parameters...
We use a numerical optimization method to determine the control parameters frequency, power, and coi...
Fast and selective inductive heating of pre-sintered silver lines on silicon as present in solar cel...
Numerical analyses are conducted to investigate the combined heat transfer in ßoating zone growth of...
The design and development of equipment and processes to demonstrate continuous growth of crystals b...
The contamination o.f a melt c aused by the material of the container is completely avoided by the f...
Nearly 90 percent of semiconductor devices are produced with Si single crystals as the starting mate...
The growth process of 2-inch silicon carbide (SiC) single crystals by the physical vapor transport m...