2017 2nd International Conference on Advanced Materials Research and Manufacturing Technologies, AMRMT 2017, Phuket, Thailand, 2-5 August, 20172017-2018 > Academic research: refereed > Publication in refereed journal201803 bcmaVersion of RecordPublishe
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel material (o...
High-quality Ge MOS capacitors with HfTiON as high-k gate dielectric are fabricated by using Ge surf...
Effects of the La2O3 passivation layer thickness on the interfacial properties of high-k/Ge interfac...
2016-2017 > Academic research: refereed > Publication in refereed journal201804_a bcmaVersion of Rec...
2016-2017 > Academic research: refereed > Publication in refereed journal201804_a bcmaVersion of Rec...
GaAs MOS capacitors with ZrTiON high-k gate dielectric and ZrLaON or ZrON as interfacial passivation...
Ge MOS capacitors with tri-layer gate dielectric are proposed by using GeON interlayer, TaON sandwic...
International audienceThe impact of different interfacial layers (ILs) on the electrical performance...
TaON is in situ formed as a passivating interlayer in Ge metal-oxide-semiconductor (MOS) capacitors ...
Ge metal-oxide-semiconductor (MOS) capacitor with YON/LaON, as interface passivation layer (IPL), an...
Abstract. The interfacial layer between oxide and semiconductor in metal-oxidesemiconductor(MOS) cap...
The electrical properties of n-Ge metal-oxide-semiconductor (MOS) capacitors with HfO 2 /LaON or HfO...
2014-2015 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
Nitrided Y2O3 (YON) interfacial passivation layer (IPL) is used to passivate the HfO2/Ge interface f...
Nitrided Y2O3 (YON) interfacial passivation layer (IPL) is used to passivate the HfO2/Ge interface f...
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel material (o...
High-quality Ge MOS capacitors with HfTiON as high-k gate dielectric are fabricated by using Ge surf...
Effects of the La2O3 passivation layer thickness on the interfacial properties of high-k/Ge interfac...
2016-2017 > Academic research: refereed > Publication in refereed journal201804_a bcmaVersion of Rec...
2016-2017 > Academic research: refereed > Publication in refereed journal201804_a bcmaVersion of Rec...
GaAs MOS capacitors with ZrTiON high-k gate dielectric and ZrLaON or ZrON as interfacial passivation...
Ge MOS capacitors with tri-layer gate dielectric are proposed by using GeON interlayer, TaON sandwic...
International audienceThe impact of different interfacial layers (ILs) on the electrical performance...
TaON is in situ formed as a passivating interlayer in Ge metal-oxide-semiconductor (MOS) capacitors ...
Ge metal-oxide-semiconductor (MOS) capacitor with YON/LaON, as interface passivation layer (IPL), an...
Abstract. The interfacial layer between oxide and semiconductor in metal-oxidesemiconductor(MOS) cap...
The electrical properties of n-Ge metal-oxide-semiconductor (MOS) capacitors with HfO 2 /LaON or HfO...
2014-2015 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
Nitrided Y2O3 (YON) interfacial passivation layer (IPL) is used to passivate the HfO2/Ge interface f...
Nitrided Y2O3 (YON) interfacial passivation layer (IPL) is used to passivate the HfO2/Ge interface f...
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel material (o...
High-quality Ge MOS capacitors with HfTiON as high-k gate dielectric are fabricated by using Ge surf...
Effects of the La2O3 passivation layer thickness on the interfacial properties of high-k/Ge interfac...