We report on the self-assembly of core-shell Ge/In-Te nanowires (NWs) on single crystal Si substrates by Metalorganic Chemical Vapour Deposition (MOCVD), coupled to the Vapour-Liquid-Solid (VLS) mechanism, catalysed by Au nanoparticles (NPs). The NWs are formed by a crystalline Ge core and an InTe (II) shell, have diameters down to 15 nm and show <110> oriented growth direction. The role of the MOCVD process parameters and of the NPs size in determining the NWs core-shell microstructure and their alignment was investigated by high-resolution TEM, EDX, XRD and Raman spectroscopy
The ability to control the morphology of heterostructured nanowires, through the design of precursor...
A well position-controllable single Ge nanowire array was grown on patterned Au catalysts substrate ...
We report the self-seeded growth of highly crystalline Ge nanowires, with a mean diameter as small a...
We report on the self-assembly of core–shell Ge/In–Te nanowires (NWs) on single crystal Si substrate...
We report the self-assembly of core-shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si subst...
Germanium nanowires were synthesized using thermal chemical vapor deposition (CVD) and indium as a c...
Controlling material thickness and element interdiffusion at the interface is crucial for many appli...
Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their gr...
Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their gr...
We report the self-assembly of core–shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si subst...
Ge-rich Ge-Sb-Te compounds are attractive materials for future phase change memories due to their gr...
The interest in the Ge doped Sb–Te chalcogenide alloy is mainly related to phase change memory appli...
Vapour-liquid-solid (VLS) techniques are popular routes for the scalable synthesis of semiconductor ...
Directing the morphological evolution of one-dimensional materials in order to tune their properties...
Controlling material thickness and element interdiffusion at the interface is crucial for many appli...
The ability to control the morphology of heterostructured nanowires, through the design of precursor...
A well position-controllable single Ge nanowire array was grown on patterned Au catalysts substrate ...
We report the self-seeded growth of highly crystalline Ge nanowires, with a mean diameter as small a...
We report on the self-assembly of core–shell Ge/In–Te nanowires (NWs) on single crystal Si substrate...
We report the self-assembly of core-shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si subst...
Germanium nanowires were synthesized using thermal chemical vapor deposition (CVD) and indium as a c...
Controlling material thickness and element interdiffusion at the interface is crucial for many appli...
Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their gr...
Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their gr...
We report the self-assembly of core–shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si subst...
Ge-rich Ge-Sb-Te compounds are attractive materials for future phase change memories due to their gr...
The interest in the Ge doped Sb–Te chalcogenide alloy is mainly related to phase change memory appli...
Vapour-liquid-solid (VLS) techniques are popular routes for the scalable synthesis of semiconductor ...
Directing the morphological evolution of one-dimensional materials in order to tune their properties...
Controlling material thickness and element interdiffusion at the interface is crucial for many appli...
The ability to control the morphology of heterostructured nanowires, through the design of precursor...
A well position-controllable single Ge nanowire array was grown on patterned Au catalysts substrate ...
We report the self-seeded growth of highly crystalline Ge nanowires, with a mean diameter as small a...