We report on the characterization of the electrical breakdown (EB) process for the formation of tunneling nanogaps in single-layer graphene. In particular, we investigated the role of oxygen in the breakdown process by varying the environmental conditions (vacuum and ambient conditions). We show that the density of oxygen molecules in the chamber is a crucial parameter that defines the physical breakdown process: at low density, the graphene lattice is sublimating, whereas at high density, the process involved is oxidation, independent of the substrate material. To estimate the activation energies of the two processes, we use a scheme which consists of applying voltage pulses across the junction during the breakdown. By systematically varyi...
Graphene epitaxy on germanium by chemical vapor deposition is a promising approach to integrate grap...
The unique electronic and physical properties of material interfaces provide a never-ending source o...
We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through gra...
We report on the characterization of the electrical breakdown (EB) process for the formation of tunn...
Graphene-based electrodes are very promising for molecular electronics and spintronics. Here we repo...
Controlled electrobreakdown of graphene is important for the fabrication of stable nanometer-size tu...
Provided the electrical properties of electroburnt graphene junctions can be understood and controll...
Herein we demonstrate the controlled and reproducible fabrication of sub-5 nm wide gaps in single-la...
We have developed a novel method of producing ultra-short channel graphene field effect devices on S...
© 2019 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim Mono-, few- and multi- layer graphene is explored ...
In the recent years, graphene-based atomic switches joined the non-volatile memory race. Many teams ...
In this work we have critically reviewed the processes in high-temperature sublimation growth of gra...
We present a first-principles study of various effects of charging and electric field on the oxidati...
Mono-, few-, and multilayer graphene is explored towards the electrochemical Hydrogen Evolution Reac...
In this work we have critically reviewed the processes in high-temperature sublimation growth of gra...
Graphene epitaxy on germanium by chemical vapor deposition is a promising approach to integrate grap...
The unique electronic and physical properties of material interfaces provide a never-ending source o...
We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through gra...
We report on the characterization of the electrical breakdown (EB) process for the formation of tunn...
Graphene-based electrodes are very promising for molecular electronics and spintronics. Here we repo...
Controlled electrobreakdown of graphene is important for the fabrication of stable nanometer-size tu...
Provided the electrical properties of electroburnt graphene junctions can be understood and controll...
Herein we demonstrate the controlled and reproducible fabrication of sub-5 nm wide gaps in single-la...
We have developed a novel method of producing ultra-short channel graphene field effect devices on S...
© 2019 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim Mono-, few- and multi- layer graphene is explored ...
In the recent years, graphene-based atomic switches joined the non-volatile memory race. Many teams ...
In this work we have critically reviewed the processes in high-temperature sublimation growth of gra...
We present a first-principles study of various effects of charging and electric field on the oxidati...
Mono-, few-, and multilayer graphene is explored towards the electrochemical Hydrogen Evolution Reac...
In this work we have critically reviewed the processes in high-temperature sublimation growth of gra...
Graphene epitaxy on germanium by chemical vapor deposition is a promising approach to integrate grap...
The unique electronic and physical properties of material interfaces provide a never-ending source o...
We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through gra...