Building a scalable quantum computer is one of the most interesting and difficult problems facing the world of physics today. The requirements for building such a machine are stringent and a number of critical challenges must be overcome before it is achieved. This thesis represents an effort to mitigate some of the challenges for the donor based Kane quantum computer and its derivatives.At the Centre of Quantum Communication and Computation, UNSW, we use scanning tunnelling microscope (STM) lithography to place individual phosphorus donors into the lattice of isotopically pure 28Si. For phosphorus in silicon (Si:P) based quantum computation, a complete understanding of tunnelling rates between planar, STM patterned regions is crucial to co...
The rapid progress in nanofabrication technologies has led to the possibility of realizing scalable ...
The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, c...
We present a single electron transistor (SET) based on an individual phosphorus dopant atom in an ep...
We investigate multi-qubit device architectures for scalable donor-based quantum computing in silico...
Quantum computing holds the promise to solve classically intractable problems. While some beyond-cla...
Phosphorus donor impurities in a silicon substrate are a promising platform for the development of a...
A computer with quantum mechanical building blocks, or qubits, promises a new class of computational...
In this thesis, we present atomically precise donor-based electronic devices, fabricated using STM h...
Atomically precise donor-based quantum devices in silicon are a promising candidate for scalable sol...
In this thesis we present single-shot spin readout of precision placed phosphorus donors in silicon....
Motivated by the advancement in phosphorus donor atom qubits in silicon over the last decade, the se...
Due to a continuous device downscaling, a precise control of dopant placements has become a critical...
Atomic-level qubits in silicon are attractive candidates for large-scale quantum computing; however,...
Silicon phosphorous donor based devices have emerged as promising candidates for future quantum comp...
Donor-based spin qubits in silicon are promising candidates for solid-state quantum computation as t...
The rapid progress in nanofabrication technologies has led to the possibility of realizing scalable ...
The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, c...
We present a single electron transistor (SET) based on an individual phosphorus dopant atom in an ep...
We investigate multi-qubit device architectures for scalable donor-based quantum computing in silico...
Quantum computing holds the promise to solve classically intractable problems. While some beyond-cla...
Phosphorus donor impurities in a silicon substrate are a promising platform for the development of a...
A computer with quantum mechanical building blocks, or qubits, promises a new class of computational...
In this thesis, we present atomically precise donor-based electronic devices, fabricated using STM h...
Atomically precise donor-based quantum devices in silicon are a promising candidate for scalable sol...
In this thesis we present single-shot spin readout of precision placed phosphorus donors in silicon....
Motivated by the advancement in phosphorus donor atom qubits in silicon over the last decade, the se...
Due to a continuous device downscaling, a precise control of dopant placements has become a critical...
Atomic-level qubits in silicon are attractive candidates for large-scale quantum computing; however,...
Silicon phosphorous donor based devices have emerged as promising candidates for future quantum comp...
Donor-based spin qubits in silicon are promising candidates for solid-state quantum computation as t...
The rapid progress in nanofabrication technologies has led to the possibility of realizing scalable ...
The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, c...
We present a single electron transistor (SET) based on an individual phosphorus dopant atom in an ep...