An analytical model is developed to decribe recombination currents arising from recombination at grain boundaries (GBs) in the depletion region of a p-n junction solar cell. Grain boundaries are modelled as having a single energy evel in the energy gap, and partial occupancy of these stats gives raise to a chage on the GB. The analytical model is compared to a complete numerical simulation package (DESSIS) and found to be in excellent agreement. Additionally,. cross sectional EBIC images of a multilayer device containing vertical GBs are presented. The experimental data is comared qualitatively with results derived from numerical modelling
The vertical junction effect in polysilicon solar cells (due to dopant penetration along grain bound...
Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical sili...
We compare the recombination properties of grain boundaries in conventionally-solidified p-type, nty...
This paper provides a theoretical investigation of recombination at grain boundaries in both bulk an...
Solar cells fabricated on polycrystalline silicon, either bulk or thin-film, can potentially be cost...
Thin-film polycrystalline photovoltaics are a mature, commercially relevant technology. However, bas...
WOS: 000437992900022This work, based on the grain size concept, is used to study a 3D Modeling of so...
The influence of grain boundary (GB) properties on device parameters of polycrystalline silicon (pol...
661-669A comprehensive carrier recombination model under optical illumination near grain boundaries...
We have developed a three-dimensional numerical model of grain boundaries to simulate the electrical...
Abstract In this paper, we present a new approach of grain boundary recombination in polycrystalline...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
The multilayer cell has been specifically designed with the aim to obtain high solar cell efficiency...
Analytical expressions for short-circuit and dark current densities are derived for a polycrystallin...
The vertical junction effect in polysilicon solar cells (due to dopant penetration along grain bound...
Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical sili...
We compare the recombination properties of grain boundaries in conventionally-solidified p-type, nty...
This paper provides a theoretical investigation of recombination at grain boundaries in both bulk an...
Solar cells fabricated on polycrystalline silicon, either bulk or thin-film, can potentially be cost...
Thin-film polycrystalline photovoltaics are a mature, commercially relevant technology. However, bas...
WOS: 000437992900022This work, based on the grain size concept, is used to study a 3D Modeling of so...
The influence of grain boundary (GB) properties on device parameters of polycrystalline silicon (pol...
661-669A comprehensive carrier recombination model under optical illumination near grain boundaries...
We have developed a three-dimensional numerical model of grain boundaries to simulate the electrical...
Abstract In this paper, we present a new approach of grain boundary recombination in polycrystalline...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
The multilayer cell has been specifically designed with the aim to obtain high solar cell efficiency...
Analytical expressions for short-circuit and dark current densities are derived for a polycrystallin...
The vertical junction effect in polysilicon solar cells (due to dopant penetration along grain bound...
Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical sili...
We compare the recombination properties of grain boundaries in conventionally-solidified p-type, nty...