Optimizing C incorporation into magnesium diboride.

  • Soo, Kien Chen
  • Kwee, Y. Tan
  • Kar, Ban Tan
  • Shaari, Abdul Halim
  • Kursumovic, Ahmed
  • MacManus-Driscoll, Judith L.
Publication date
January 2011
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
ISSN
1051-8223

Abstract

In this work, either SiC or separate Si and C (Si+C) powders of up to 10 weight percentage were in situ reacted with Mg and B (molar ratio of 1:2) and the superconducting properties compared. The latter shows a smaller a-axis lattice cell parameter as compared to the same level of SiC additions, indicating a higher level of C substitution. In those samples, a larger increase in the C-axis is also noticeable and a more severe degradation in the superconducting transition temperature is observed. However, reaction with SiC causes a greater broadening in the transition width. At both 5Kand 20 K, for samples reacted with SiC (up to 5 wt.%) a stronger improvement in the magnitude of critical current density, J c, is obtained. On the other hand, ...

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