The electromagnetic properties at the interface of heterostructure are sensitive to the interfacial crystal structure and external field. For example, the two-dimensional magnetic states at the interface of LaAlO<sub>3</sub>/SrTiO<sub>3</sub> are discovered and can further be controlled by electric field. Here, we study two types of heterostructures, TiO<sub>2</sub>/PbTiO<sub>3</sub> and SrTiO<sub>3</sub>/PbTiO<sub>3</sub>, using first-principle electronic structure calculations. We find that the ferroelectric polarization discontinuity at the interface leads to partially occupied Ti 3d states and the magnetic moments. The magnitude of the magnetic moments and the ground-state magnetic coupling are sensitive to the polarization intensity of...
Using ab-initio simulations, we investigated the effects of ferroelectric polarization on the magnet...
Thin-film oxide heterostructures show great potential for use in spintronic memories, where electron...
The development of energy-efficient nanoelectronics based on ferroelectrics is hampered by a notorio...
Novel phenomena appear when two different oxide materials are combined together to form an interface...
Perovskite oxide interfaces have been used recently as platforms for demonstrating rich physical pro...
We investigate the effect of PbTiO3 on the LaAlO\(_3\)/SrTiO\(_3\) hetero-structure by density funct...
Complex oxide thin-film heterostructures often exhibit magnetic properties different from those know...
Multiple polar states and giant piezoelectric responses could be driven by polarization rotation in ...
Emergent physical properties often arise at interfaces of complex oxide heterostructures due to the ...
Advances in modern computational techniques have provided us with the ability to develop a fundament...
Utilization of the switchable spontaneous polarization of nanometer scale ferroelectric materials of...
The structural, electronic and magnetic properties of interfaces between epitaxial La0.7Sr0.3MnO3 an...
Perovskite materials, having the simple ABO3 chemical formula, show a wide variety of electronic pro...
Ferroelectric materials are characterized by a reversible spontaneous electric polarization in the a...
Along with an unexpected conducting interface between nonmagnetic insulating perovskites LaAlO<sub>3...
Using ab-initio simulations, we investigated the effects of ferroelectric polarization on the magnet...
Thin-film oxide heterostructures show great potential for use in spintronic memories, where electron...
The development of energy-efficient nanoelectronics based on ferroelectrics is hampered by a notorio...
Novel phenomena appear when two different oxide materials are combined together to form an interface...
Perovskite oxide interfaces have been used recently as platforms for demonstrating rich physical pro...
We investigate the effect of PbTiO3 on the LaAlO\(_3\)/SrTiO\(_3\) hetero-structure by density funct...
Complex oxide thin-film heterostructures often exhibit magnetic properties different from those know...
Multiple polar states and giant piezoelectric responses could be driven by polarization rotation in ...
Emergent physical properties often arise at interfaces of complex oxide heterostructures due to the ...
Advances in modern computational techniques have provided us with the ability to develop a fundament...
Utilization of the switchable spontaneous polarization of nanometer scale ferroelectric materials of...
The structural, electronic and magnetic properties of interfaces between epitaxial La0.7Sr0.3MnO3 an...
Perovskite materials, having the simple ABO3 chemical formula, show a wide variety of electronic pro...
Ferroelectric materials are characterized by a reversible spontaneous electric polarization in the a...
Along with an unexpected conducting interface between nonmagnetic insulating perovskites LaAlO<sub>3...
Using ab-initio simulations, we investigated the effects of ferroelectric polarization on the magnet...
Thin-film oxide heterostructures show great potential for use in spintronic memories, where electron...
The development of energy-efficient nanoelectronics based on ferroelectrics is hampered by a notorio...