A new capacitance-voltage profiling technique of semiconductor junctions is proposed for characterisation of semiconductor materials and devices. The measurement technique is simple, non-destructive and it has a greater accuracy compared with the classical C-V method of J. Hilibrand and R. D. Gold, developed in 1960
This thesis describes the theory, simulation and experimental implementation of a method by which an...
In this study, a capacitance-voltage fitting algorithm was developed using four region approximation...
ITO/semiconductor/metal structures, with metal-free tetraphenylporphyrin (H2-TPP) as organic semicon...
Advances in growth techniques for semiconductor microstructures have led to a demand for more sophis...
Capacitance-voltage (CV) measurements are used widely as an effective method for Metal-Insulator-Sil...
The paper investigates two-sided capacitance-voltage (C-V) technique for application in doping profi...
Abstract—In this paper, the on-wafer measurement of junction depletion capacitance is examined. This...
New measurement technology for capacitance technique is presented. The main distinctive feature of t...
A differential voltage capacitance technique is described for measuring the capacitance of forward-b...
Catering to a large undergraduate laboratory class requires the experiments to be robust, low mainte...
It is shown that computer systems for measuring current-voltage characteristics are very important f...
M.Ing. (Electrical & Electronic Engineering)Measurement techniques and software were developed for t...
Based on a C8051F006 SoC (system on-a-chip), a simple and low cost quasi-static capacitance-voltage ...
The quasi-static capacitance-voltage (C-V) technique measures the dependence of junction capacitance...
International audienceScanning capacitance microscopy (SCM) is a doping profile extraction using a n...
This thesis describes the theory, simulation and experimental implementation of a method by which an...
In this study, a capacitance-voltage fitting algorithm was developed using four region approximation...
ITO/semiconductor/metal structures, with metal-free tetraphenylporphyrin (H2-TPP) as organic semicon...
Advances in growth techniques for semiconductor microstructures have led to a demand for more sophis...
Capacitance-voltage (CV) measurements are used widely as an effective method for Metal-Insulator-Sil...
The paper investigates two-sided capacitance-voltage (C-V) technique for application in doping profi...
Abstract—In this paper, the on-wafer measurement of junction depletion capacitance is examined. This...
New measurement technology for capacitance technique is presented. The main distinctive feature of t...
A differential voltage capacitance technique is described for measuring the capacitance of forward-b...
Catering to a large undergraduate laboratory class requires the experiments to be robust, low mainte...
It is shown that computer systems for measuring current-voltage characteristics are very important f...
M.Ing. (Electrical & Electronic Engineering)Measurement techniques and software were developed for t...
Based on a C8051F006 SoC (system on-a-chip), a simple and low cost quasi-static capacitance-voltage ...
The quasi-static capacitance-voltage (C-V) technique measures the dependence of junction capacitance...
International audienceScanning capacitance microscopy (SCM) is a doping profile extraction using a n...
This thesis describes the theory, simulation and experimental implementation of a method by which an...
In this study, a capacitance-voltage fitting algorithm was developed using four region approximation...
ITO/semiconductor/metal structures, with metal-free tetraphenylporphyrin (H2-TPP) as organic semicon...
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