We study a memristive circuit with included parasitic elements, such as capacitance and inductance. In the multiple-scale scheme, we analytically show how the parasitic elements affect the voltage and the current. Finally, we provide an analytical expression for the intersection point coordinates, through which we discuss the functional behavior of the pinched hysteresis loop versus the operating frequency and the parasitic elements
Abstract The first intentional memristor was physically realized in 2008 and the memcapacitor in 201...
This brief aims at defining a class D of extended memristors by using a combination of fundamental a...
Memristors have pinched hysteresis loops in the V-I plane. Ideal memristors are everywhere non-linea...
We study a memristive circuit with included parasitic elements, such as capacitance and inductance. ...
In this research, we study the effects of the parasitic fractional elements to the dynamic of the me...
The main purpose of this paper is to investigate the influence of the mutual inductance between the ...
The hysteresis loops pinched in the v-i origin belong to well-known fingerprints of memristive eleme...
In this paper, we revisit the memristor concept within circuit theory. We start from the definition ...
In non-linear measurements, the applied stimulus itself affects the electrical properties of the und...
In non-linear measurements, the applied stimulus itself affects the electrical properties of the und...
Memristors are the predicted fourth fundamental passive element of circuits, connecting a previously...
<p>(a) Simulated pinched hysteresis I-V responses at frequencies of ω<sub>0</sub> and 10ω<sub>0</sub...
Memristor-based circuits are widely exploited to realize analog and/or digital systems for a broad s...
This article investigates the frequency-related fingerprints of the meminductor/capacitors and their...
Abstract—We investigate the Fourier transform of the current through a memristor when the applied-vo...
Abstract The first intentional memristor was physically realized in 2008 and the memcapacitor in 201...
This brief aims at defining a class D of extended memristors by using a combination of fundamental a...
Memristors have pinched hysteresis loops in the V-I plane. Ideal memristors are everywhere non-linea...
We study a memristive circuit with included parasitic elements, such as capacitance and inductance. ...
In this research, we study the effects of the parasitic fractional elements to the dynamic of the me...
The main purpose of this paper is to investigate the influence of the mutual inductance between the ...
The hysteresis loops pinched in the v-i origin belong to well-known fingerprints of memristive eleme...
In this paper, we revisit the memristor concept within circuit theory. We start from the definition ...
In non-linear measurements, the applied stimulus itself affects the electrical properties of the und...
In non-linear measurements, the applied stimulus itself affects the electrical properties of the und...
Memristors are the predicted fourth fundamental passive element of circuits, connecting a previously...
<p>(a) Simulated pinched hysteresis I-V responses at frequencies of ω<sub>0</sub> and 10ω<sub>0</sub...
Memristor-based circuits are widely exploited to realize analog and/or digital systems for a broad s...
This article investigates the frequency-related fingerprints of the meminductor/capacitors and their...
Abstract—We investigate the Fourier transform of the current through a memristor when the applied-vo...
Abstract The first intentional memristor was physically realized in 2008 and the memcapacitor in 201...
This brief aims at defining a class D of extended memristors by using a combination of fundamental a...
Memristors have pinched hysteresis loops in the V-I plane. Ideal memristors are everywhere non-linea...