A decoration and etching technique was developed to delineate several types of defects in silicon wafers, slugs and slabs. The technique was originally developed to detect interstitial type (A) defects but it has proved highly effective in decorating all kinds of other defects. Being fast, and requiring no special equipment except an inexpensive muffle furnace and a dedicated etch bench the technique has quickly become an integral part of our characterization portfolio. We discuss below how we have used this technique and its advantages over other methods used to detect A-defects.peer-reviewe
International audienceDefects in crystalline silicon are often detrimental for devices notably affec...
Striations were revealed by preferential etching of preannealed longi-tudinal crystal slices taken f...
172 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.The technologically useful pr...
Microdefect distribution in a monocrystalline silicon wafer is identified by saturating the wafer wi...
We have selected Secco and Yang etch solutions for the crystalline defect delineation on multicrysta...
This work is concerned with the study and explanation of a peculiar phenomenon that can be observed ...
Us ing transmission electron mic roscopy combined with energy dispersive x-ray spectrometry we have ...
Research on the structural defects of silicon such as grain boundaries and dislocations, their spati...
Electron beam induced current (EBIC) and atom probe tomography (APT) were used in this study to dete...
On passe en revue les récentes études de défauts dans le silicium traité par faisceau d'énergie en p...
The control and evaluation of surface defects are important issues in SOI production. We introduce n...
Approximately 50% of solar cells are based on multicrystalline silicon (mc-Si). A major limiting fac...
This article demonstrates an approach for multiscale characterisation of individual defects, such as...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Nuclear Engineering, 1997.Includes ...
The IC industry has improved process yield and device reliability considerably over the last few yea...
International audienceDefects in crystalline silicon are often detrimental for devices notably affec...
Striations were revealed by preferential etching of preannealed longi-tudinal crystal slices taken f...
172 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.The technologically useful pr...
Microdefect distribution in a monocrystalline silicon wafer is identified by saturating the wafer wi...
We have selected Secco and Yang etch solutions for the crystalline defect delineation on multicrysta...
This work is concerned with the study and explanation of a peculiar phenomenon that can be observed ...
Us ing transmission electron mic roscopy combined with energy dispersive x-ray spectrometry we have ...
Research on the structural defects of silicon such as grain boundaries and dislocations, their spati...
Electron beam induced current (EBIC) and atom probe tomography (APT) were used in this study to dete...
On passe en revue les récentes études de défauts dans le silicium traité par faisceau d'énergie en p...
The control and evaluation of surface defects are important issues in SOI production. We introduce n...
Approximately 50% of solar cells are based on multicrystalline silicon (mc-Si). A major limiting fac...
This article demonstrates an approach for multiscale characterisation of individual defects, such as...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Nuclear Engineering, 1997.Includes ...
The IC industry has improved process yield and device reliability considerably over the last few yea...
International audienceDefects in crystalline silicon are often detrimental for devices notably affec...
Striations were revealed by preferential etching of preannealed longi-tudinal crystal slices taken f...
172 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.The technologically useful pr...