Tris-N,N,-dimethyl-N,N -diisopropylguanidinatoindium(III) has been investigated both as a chemical vapor deposition precursor and an atomic layer deposition precursor. Although deposition was satisfactory in both cases, each report showed some anomalies in the thermal stability of this compound, warrenting further investigation, which is reported herein. The compound was found to decompose to produce diisopropylcarbodiimide both by computational modeling and solution phase nuclear magnetic resonance characterization. The decomposition was shown to have an onset at approximately 120 degrees C and had a constant rate of decomposition from 150 to 180 degrees C. The ultimate decomposition product was suspected to be bisdimethylamidoN, N,-dimeth...
Indium nitride (InN) is an interesting material for future high-frequency electronics due to its hig...
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking mat...
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking mat...
Tris-N,N,-dimethyl-N,N -diisopropylguanidinatoindium(III) has been investigated both as a chemical v...
A time-resolved chemical vapor deposition process for indium nitride (InN) is reported using tris-N,...
Indium nitride (InN) is an interesting material for future electronic and photonic-related applicati...
Indium nitride has many applications as a semiconductor. High quality films of indium nitride can be...
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking mat...
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking mat...
A new homoleptic sublimable indium(iii) guanidinate, (In[(N iPr) 2CNMe 2] 3 (1), was synthesized fro...
The reactions of trimethylindium (TMIn) with HN3 and NH3 are relevant to the chemical vapor depositi...
Compounds containing indium are of interest for electronic and optical applications. These compounds...
The following thesis deals with the elucidation of the gas-phase decomposition mechanism of the intr...
Indium nitride (InN) is an interesting material for future high-frequency electronics due to its hig...
The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was...
Indium nitride (InN) is an interesting material for future high-frequency electronics due to its hig...
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking mat...
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking mat...
Tris-N,N,-dimethyl-N,N -diisopropylguanidinatoindium(III) has been investigated both as a chemical v...
A time-resolved chemical vapor deposition process for indium nitride (InN) is reported using tris-N,...
Indium nitride (InN) is an interesting material for future electronic and photonic-related applicati...
Indium nitride has many applications as a semiconductor. High quality films of indium nitride can be...
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking mat...
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking mat...
A new homoleptic sublimable indium(iii) guanidinate, (In[(N iPr) 2CNMe 2] 3 (1), was synthesized fro...
The reactions of trimethylindium (TMIn) with HN3 and NH3 are relevant to the chemical vapor depositi...
Compounds containing indium are of interest for electronic and optical applications. These compounds...
The following thesis deals with the elucidation of the gas-phase decomposition mechanism of the intr...
Indium nitride (InN) is an interesting material for future high-frequency electronics due to its hig...
The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was...
Indium nitride (InN) is an interesting material for future high-frequency electronics due to its hig...
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking mat...
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking mat...