Resistance controllability and variability improvement in a TaO x -based resistive memory for multilevel storage application
- Prakash, A.
- Deleruyelle, D.
- Song, J.
- Bocquet, Marc
- Hwang, H.
DOIAbstract
International audienceIn order to obtain reliable multilevel cell (MLC) characteristics, resistance controllability between the different resistance levels is required especially in resistive random access memory (RRAM), which is prone to resistance variability mainly due to its intrinsic random nature of defect generation and filament formation. In this study, we have thoroughly investigated the multilevel resistance variability in a TaOx-based nanoscale (<30 nm) RRAM operated in MLC mode. It is found that the resistance variability not only depends on the conductive filament size but also is a strong function of oxygen vacancy concentration in it. Based on the gained insights through experimental observations and simulation, it is suggest...
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