This document is the result of my thesis work at the CEA-Leti Grenoble.It covers the evolution of the piezoresistive effect and the electrical transport properties of field effect transistor device against several variable such as geometry, temperature, internal stress....The focus of this work is to understand the effect brought by extreme reducing of channel and gate dimensions in MOSFET transistors.A special attention is given on electrical data modeling. Different algorithms are used to extract key parameters of devices and their viability against the device dimensions considered is discussed. A new piezoresistive coefficients model is drawn from a known mobility model,it allows to draw a reliable tendancy of piezoresistive variation ag...