A three-dimensional Computational Fluid Dynamics model is built for a commercial Atomic Layer Deposition (ALD) reactor, designed to treat large area 20 cm substrates. The model aims to investigate the effect of the reactor geometry and process parameters on the gas flow and temperature fields, and on the species distribution on the heated substrate surface, for the deposition of Al2O3 films from trimethyl aluminum and H2O. The investigation is performed in transient conditions, without considering any surface reaction. A second CFD model is developed for the feeding system of the reactor, in order to calculate the unknown reactant inlet flow rates. The two models are coupled via a computational strategy dictated by the available experimenta...
In order to minimize the operational time of atomic layer deposition (ALD) process, flow transports ...
An improved reactive transport model of a metallorganic chemical vapor deposition process for the gr...
Abstract: In the cause of the increasing need for miniaturisation of devices, a more sophisticated n...
International audienceA three-dimensional Computational Fluid Dynamics model is built for a commerci...
A three-dimensional Computational Fluid Dynamics (CFD) model is built for a Cambridge Nanotech® ALD ...
The surface mechanisms involved in the Atomic Layer Deposition of Al2O3 from TMA and H2O are investi...
The requirements of the microelectronic industry, producing high quality electronic devices, has led...
During the last two decades, Atomic Layer Deposition (ALD) has emerged as the appropriate process to...
In this work, the surface mechanisms including reaction, adsorption and desorption steps during the ...
Abstract: Low throughput is a major limitation for industrial level atomic layer deposition (ALD) ap...
© 2015 American Vacuum Society. Alumina thin film is typically studied as a model atomic layer depos...
Abstract: With the recent increase in the scaling down of devices, there has been an immense increas...
A first principles model describing the reaction kinetics and surface species dynamics for the trime...
In order to minimize the operational time of atomic layer deposition (ALD) process, flow transports ...
An improved reactive transport model of a metallorganic chemical vapor deposition process for the gr...
Abstract: In the cause of the increasing need for miniaturisation of devices, a more sophisticated n...
International audienceA three-dimensional Computational Fluid Dynamics model is built for a commerci...
A three-dimensional Computational Fluid Dynamics (CFD) model is built for a Cambridge Nanotech® ALD ...
The surface mechanisms involved in the Atomic Layer Deposition of Al2O3 from TMA and H2O are investi...
The requirements of the microelectronic industry, producing high quality electronic devices, has led...
During the last two decades, Atomic Layer Deposition (ALD) has emerged as the appropriate process to...
In this work, the surface mechanisms including reaction, adsorption and desorption steps during the ...
Abstract: Low throughput is a major limitation for industrial level atomic layer deposition (ALD) ap...
© 2015 American Vacuum Society. Alumina thin film is typically studied as a model atomic layer depos...
Abstract: With the recent increase in the scaling down of devices, there has been an immense increas...
A first principles model describing the reaction kinetics and surface species dynamics for the trime...
In order to minimize the operational time of atomic layer deposition (ALD) process, flow transports ...
An improved reactive transport model of a metallorganic chemical vapor deposition process for the gr...
Abstract: In the cause of the increasing need for miniaturisation of devices, a more sophisticated n...