Short-channel field-effect transistors (FETs) prepared from semiconducting single-walled carbon nanotube (s-SWNT) dispersions sorted with poly(2,5-dimethylidynenitrilo-3,4-didodecylthienylene) are demonstrated. Electrical analysis of the FETs shows no evidence of metallic tubes out of a total number of 646 SWNTs tested, implying an estimated purity of our semiconducting SWNT solution higher than 99.85%. These findings confirm the effectiveness of the polymer-wrapping technique in selecting semiconducting SWNTs, as well as the potential of sorted nanotubes for the fabrication of short channel FETs comprising from 1 to up to 15 nanotubes without inter-nanotube junctions. Published by AIP Publishing
High-purity semiconducting single-walled carbon nanotubes (s-SWCNTs) are urgently needed in the deve...
Polymer wrapped single-walled carbon nanotubes (SWNTs) have been demonstrated to be a very effi cien...
High-purity semiconducting single-walled carbon nanotubes (s-SWNTs) can be obtained by conjugated po...
Short-channel field-effect transistors (FETs) prepared from semiconducting single-walled carbon nano...
Short-channel field-effect transistors (FETs) prepared from semiconducting single-walled carbon nano...
Short-channel field-effect transistors (FETs) prepared from semiconducting single-walled carbon nano...
Short-channel field-effect transistors (FETs) prepared from semiconducting single-walled carbon nano...
Short-channel field-effect transistors (FETs) prepared from semiconducting single-walled carbon nano...
Single walled carbon nanotubes (SWNTs) have been successfully employed in a wide range of large-area...
Samples of highly enriched semiconducting SWCNTs with average diameters of 1.35 nm have been prepar...
Efficient selection of semiconducting SWCNTs of large diameter range (0.8-1.6 nm) on demand is demon...
Efficient selection of semiconducting SWCNTs of large diameter range (0.8-1.6 nm) on demand is demon...
Efficient selection of semiconducting SWCNTs of large diameter range (0.8-1.6 nm) on demand is demon...
Efficient selection of semiconducting SWCNTs of large diameter range (0.8-1.6 nm) on demand is demon...
Efficient selection of semiconducting SWCNTs of large diameter range (0.8-1.6 nm) on demand is demon...
High-purity semiconducting single-walled carbon nanotubes (s-SWCNTs) are urgently needed in the deve...
Polymer wrapped single-walled carbon nanotubes (SWNTs) have been demonstrated to be a very effi cien...
High-purity semiconducting single-walled carbon nanotubes (s-SWNTs) can be obtained by conjugated po...
Short-channel field-effect transistors (FETs) prepared from semiconducting single-walled carbon nano...
Short-channel field-effect transistors (FETs) prepared from semiconducting single-walled carbon nano...
Short-channel field-effect transistors (FETs) prepared from semiconducting single-walled carbon nano...
Short-channel field-effect transistors (FETs) prepared from semiconducting single-walled carbon nano...
Short-channel field-effect transistors (FETs) prepared from semiconducting single-walled carbon nano...
Single walled carbon nanotubes (SWNTs) have been successfully employed in a wide range of large-area...
Samples of highly enriched semiconducting SWCNTs with average diameters of 1.35 nm have been prepar...
Efficient selection of semiconducting SWCNTs of large diameter range (0.8-1.6 nm) on demand is demon...
Efficient selection of semiconducting SWCNTs of large diameter range (0.8-1.6 nm) on demand is demon...
Efficient selection of semiconducting SWCNTs of large diameter range (0.8-1.6 nm) on demand is demon...
Efficient selection of semiconducting SWCNTs of large diameter range (0.8-1.6 nm) on demand is demon...
Efficient selection of semiconducting SWCNTs of large diameter range (0.8-1.6 nm) on demand is demon...
High-purity semiconducting single-walled carbon nanotubes (s-SWCNTs) are urgently needed in the deve...
Polymer wrapped single-walled carbon nanotubes (SWNTs) have been demonstrated to be a very effi cien...
High-purity semiconducting single-walled carbon nanotubes (s-SWNTs) can be obtained by conjugated po...