Recent research results on deep level defects in semi-insulating InP - Application to improve material quality

Deep level defects in high temperature annealed InP

Dong ZY
Zhao YM
Zeng YP
Duan ML
Lin LY
Dong, ZY, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100080, Peoples R China. 电子邮箱地址: dongzy@red.semi.ac.cn

January 2004

Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level ...

Annealing ambient controlled deep defect formation in InP

Zhao, YW
Dong, ZY
Duan, ML
Sun, WR
Zeng, YP
Sun, NF
Sun, TN
Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc

January 2004

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy...

Annealing ambient controlled deep defect formation in InP

Zhao YW
Dong ZY
Duan ML
Sun WR
Zeng YP
Sun NF
Sun TN
Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc

January 2004

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy...

Non-stoichiometry Related Deep Level Defects in Semi-insulating InP

Zhao Youwen
Dong Zhiyuan
Duan Manlong
Sun Wenrong
Yang Zixiang
Lu Xuru
Wang Yingli

January 2004

Semi-insulating (SI) InP materials have been prepared under different stoichiometric conditions, inc...

Influence of deep level defects on electrical compensation in semi-insulating InP materials

Yang, J (Yang Jun)
Zhao, YW (Zhao You-Wen)
Dong, ZY (Dong Zhi-Yuan)
Deng, AH (Deng Ai-Hong)
Miao, SS (Miao Shan-Shan)
Wang, B (Wang Bo)
Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn

January 2007

In this paper, we analyze and compare electrical compensation and deep level defects in semi-insulat...

Improvement of the electrical property of semi-insulating InP by suppression of compensation defects

Zhao, YW
Dong, ZY
Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.

January 2005

Semi-insulating (SI) InP obtained by iron phosphide ambient annealing has very low concentration of ...

Creation and suppression of point defects through a kick-out substitution process of Fe in InP

Zhao YW
Dong HW
Chen YH
Zhang YH
Jiao JH
Zhao JQ
Lin LY
Fung S
Zhao YW,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2002

Indium antisite defect In-P-related photoluminescence has been observed in Fe-diffused semi-insulati...

Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Zhao, YW
Dong, ZY
Duan, ML
Sun, WR
Yang, ZX
Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn

January 2006

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated...

Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Zhao YW
Dong ZY
Duan ML
Sun WR
Yang ZX
Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: zhaoyw@red.semi.ac.cn

January 2006

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated...

Annihilation of deep level defects in InP through high temperature annealing

Zhao, YW
Dong, ZY
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn

January 2008

Deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) have be...

Generation and suppression of deep level defects in InP

Zhao YW (Zhao You-Wen)
Dong ZY (Dong Zhi-Yuan)
Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn

January 2007

Deep level defects in as-grown and annealed n-type and semi-insulating InP have been studied. After ...

Preparation of Semi-Insulating Material by Annealing Undoped InP

Zhao Youwen
Dong Hongwei
Jiao Jinghua
Zhao Jianqun
Lin Lanying
Sun Niefeng
Sun Tongnian

January 2002

Semi-insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped l...

Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance

Dong HW
Zhao YW
Zhang YH
Jiao JH
Zhao JQ
Lin LY
Dong HW,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.

January 2002

Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have b...

On the physical parameters and crystal defects of bulk semi-insulating InP for radiation detector fabrication

Korytar D.
Ferrari C.
Surma B.
Strzelecka S.
Dubecky F.
Huran J.
Fornari R.
Pekarek L.
Prochazkova O.
Smatko V.
Hruban A.

January 2000

Semi-insulating (SI) InP substrates from various producers have been studied by the Hall technique, ...

Development of wafer annealing for semi-insulating InP

Uchida, M.
Japan Energy Corporation,

April 1997

AbstractSemi-insulating (SI) InP is becoming more and more important not only for high frequency dev...

Deep level defects in high temperature annealed InP

Dong ZY
Zhao YM
Zeng YP
Duan ML
Lin LY
Dong, ZY, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100080, Peoples R China. 电子邮箱地址: dongzy@red.semi.ac.cn

January 2004

Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level ...

Annealing ambient controlled deep defect formation in InP

Zhao, YW
Dong, ZY
Duan, ML
Sun, WR
Zeng, YP
Sun, NF
Sun, TN
Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc

January 2004

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy...

Annealing ambient controlled deep defect formation in InP

Zhao YW
Dong ZY
Duan ML
Sun WR
Zeng YP
Sun NF
Sun TN
Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc

January 2004

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy...

Non-stoichiometry Related Deep Level Defects in Semi-insulating InP

Zhao Youwen
Dong Zhiyuan
Duan Manlong
Sun Wenrong
Yang Zixiang
Lu Xuru
Wang Yingli

January 2004

Semi-insulating (SI) InP materials have been prepared under different stoichiometric conditions, inc...

Influence of deep level defects on electrical compensation in semi-insulating InP materials

Yang, J (Yang Jun)
Zhao, YW (Zhao You-Wen)
Dong, ZY (Dong Zhi-Yuan)
Deng, AH (Deng Ai-Hong)
Miao, SS (Miao Shan-Shan)
Wang, B (Wang Bo)
Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn

January 2007

In this paper, we analyze and compare electrical compensation and deep level defects in semi-insulat...

Improvement of the electrical property of semi-insulating InP by suppression of compensation defects

Zhao, YW
Dong, ZY
Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.

January 2005

Semi-insulating (SI) InP obtained by iron phosphide ambient annealing has very low concentration of ...

Creation and suppression of point defects through a kick-out substitution process of Fe in InP

Zhao YW
Dong HW
Chen YH
Zhang YH
Jiao JH
Zhao JQ
Lin LY
Fung S
Zhao YW,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2002

Indium antisite defect In-P-related photoluminescence has been observed in Fe-diffused semi-insulati...

Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Zhao, YW
Dong, ZY
Duan, ML
Sun, WR
Yang, ZX
Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn

January 2006

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated...

Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Zhao YW
Dong ZY
Duan ML
Sun WR
Yang ZX
Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: zhaoyw@red.semi.ac.cn

January 2006

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated...

Annihilation of deep level defects in InP through high temperature annealing

Zhao, YW
Dong, ZY
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn

January 2008

Deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) have be...

Generation and suppression of deep level defects in InP

Zhao YW (Zhao You-Wen)
Dong ZY (Dong Zhi-Yuan)
Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn

January 2007

Deep level defects in as-grown and annealed n-type and semi-insulating InP have been studied. After ...

Preparation of Semi-Insulating Material by Annealing Undoped InP

Zhao Youwen
Dong Hongwei
Jiao Jinghua
Zhao Jianqun
Lin Lanying
Sun Niefeng
Sun Tongnian

January 2002

Semi-insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped l...

Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance

Dong HW
Zhao YW
Zhang YH
Jiao JH
Zhao JQ
Lin LY
Dong HW,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.

January 2002

Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have b...

On the physical parameters and crystal defects of bulk semi-insulating InP for radiation detector fabrication

Korytar D.
Ferrari C.
Surma B.
Strzelecka S.
Dubecky F.
Huran J.
Fornari R.
Pekarek L.
Prochazkova O.
Smatko V.
Hruban A.

January 2000

Semi-insulating (SI) InP substrates from various producers have been studied by the Hall technique, ...

Development of wafer annealing for semi-insulating InP

Uchida, M.
Japan Energy Corporation,

April 1997

AbstractSemi-insulating (SI) InP is becoming more and more important not only for high frequency dev...

Deep level defects in high temperature annealed InP

Dong ZY
Zhao YM
Zeng YP
Duan ML
Lin LY
Dong, ZY, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100080, Peoples R China. 电子邮箱地址: dongzy@red.semi.ac.cn

January 2004

Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level ...

Annealing ambient controlled deep defect formation in InP

Zhao, YW
Dong, ZY
Duan, ML
Sun, WR
Zeng, YP
Sun, NF
Sun, TN
Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc

January 2004

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy...

Annealing ambient controlled deep defect formation in InP

Zhao YW
Dong ZY
Duan ML
Sun WR
Zeng YP
Sun NF
Sun TN
Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc

January 2004

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy...

Recent research results on deep level defects in semi-insulating InP - Application to improve material quality

Abstract

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Recent research results on deep level defects in semi-insulating InP - Application to improve material quality

Abstract

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