Thermal Radiation from Co-evaporated Cu(In,Ga)Se2 : End point detection and process control

The use of solar cells for energy production has indeed a bright future. Reduction of cost for fabrication along with increased efficiency are key features for a market boom, both achieved as a result of increased knowledge of the technology. Especially the thin film solar cell technology with absorbers made of Cu(In,Ga)Se2 (CIGS) is promising since it has proven high power conversion efficiency in combination with a true potential for low cost fabrication. In this thesis different recipes for fabrication of the Cu(In,Ga)Se2 absorber layer have been studied. The deposition technique used has been co-evaporation from elemental sources. For all depositions the substrate has been heated to a constant temperature of 500 ºC in order for the growing absorber to form a chalcopyrite phase, necessary for the photovoltaic functionality. The selenium has been evaporated such to always be in excess during depositions whereas the metal ratio Cu/(In+Ga) has been varied according to different recipes but always to be less than one at the end of the process. In the work emphasis has been on the radiative properties of the CIGS film during growth. The substrate heater has been temperature controlled to maintain the constant set temperature of the substrate, regardless of varying emitted power caused by changing surface emissivity. Depending on the growth conditions the emissivity of the growing film is changing, leading to a readable variation in the electrical power to the substrate heater. Since the thermal radiation from the substrate during growth has been of central focus, this has been studied in detail. For this reason the substrate has been treated as an optical stack composed of glass/Mo/Cu(In,Ga)Se2/CuxSe which determine the thermally radiated power by its emissivity. An optical model has been adopted to simulate the emissivity of the stack. In order to use the model, the optical constants for Cu(In,Ga)Se2 and CuxSe have been derived for the wavelength interval 2 μm to 20 μm. The simulation of the emissivity of the stack during CIGS growth agreed well with what has been seen for actual growth. Features of the OP-signal could hereby be explained as a result of film thickness of Cu(In,Ga)Se2 and CuxSe respectively. This is an important knowledge for an efficient fabrication in large scale