Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the electron mean free path and degrades their electronic properties. Aberration-corrected scanning transmission electron microscopy (STEM) is now capable of directly imaging single Au atoms within the dense matrix of a GaAs crystal, by slightly tilting the GaAs lattice planes with respect to the incident electron beam. Au doping values in the order of 10<sup>17–18</sup> cm<sup>3</sup> were measured, making ballistic transport through the nanowires practically inaccessible
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
We investigated by means of transmission electron microscopy (TEM) GaAs-AlGaAs core-shell nanowires ...
International audienceUltrathin chemically grown gold nanowires undergo irremediable structural modi...
Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the ele...
Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning ...
Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, U...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...
Dopant atoms can be incorporated into nanowires either via the vapor-liquid-solid mechanism through ...
Abstract: The ability of electron microscopes to analyze all the atoms in individual nanostructures ...
Electron tomography based on Z-contrast scanning transmission electron microscopy (STEM) can be appl...
Controllable doping of semiconductor nanowires is critical to realize their proposed applications, h...
We demonstrate the three-dimensional composition mapping of a semiconductor nanowire with single-ato...
We report on structural and electrical properties of GaAs nanowires (NWs) grown by molecular beam ep...
Atoms and their arrangement in materials have become a central focus in the era of nanoscience. Mate...
In order to perform charge transport measurements on freestanding as-grown GaAs nanowires, a room-te...
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
We investigated by means of transmission electron microscopy (TEM) GaAs-AlGaAs core-shell nanowires ...
International audienceUltrathin chemically grown gold nanowires undergo irremediable structural modi...
Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the ele...
Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning ...
Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, U...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...
Dopant atoms can be incorporated into nanowires either via the vapor-liquid-solid mechanism through ...
Abstract: The ability of electron microscopes to analyze all the atoms in individual nanostructures ...
Electron tomography based on Z-contrast scanning transmission electron microscopy (STEM) can be appl...
Controllable doping of semiconductor nanowires is critical to realize their proposed applications, h...
We demonstrate the three-dimensional composition mapping of a semiconductor nanowire with single-ato...
We report on structural and electrical properties of GaAs nanowires (NWs) grown by molecular beam ep...
Atoms and their arrangement in materials have become a central focus in the era of nanoscience. Mate...
In order to perform charge transport measurements on freestanding as-grown GaAs nanowires, a room-te...
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
We investigated by means of transmission electron microscopy (TEM) GaAs-AlGaAs core-shell nanowires ...
International audienceUltrathin chemically grown gold nanowires undergo irremediable structural modi...