The development of the transistor has brought about a great deal of research in the field of semiconductors. One of the results in this research is the development of the Hall effect. A number of new devices which utilize the Hall effect have been proposed; however, more theoretical and experimental work is required to determine which of these devices are practical. The success of the equivalent circuit approach in the other fields of electrical engineering suggests that an equivalent circuit which would represent Hall effect devices would be useful. The development of such an equivalent circuit should be centered about a knowledge of the device and its possible applications. It is with this viewpoint in mind that some if the more pertinent...
This project deals with the development of a computer interfacing technique for the study of Hall ef...
AbstractThe quantitative measurement of carrier concentrations and mobilities is of vital importance...
Silicon Hall plates show an offset of a few millitesla. A large portion of this offset is caused by ...
Now Hall Effect devices are used in many technical applications, but the full effect description is ...
This is a study of the behavior of a Hall Effect device by theoretical and experimental methods to...
A purely electronic four-quadrant analog multiplier of wide bandwidth and good accuracy has always b...
Experiments relevant to the development an integrated Hall effect sensor have been performed. Carrie...
The Hall Effect has long been the standard experimental technique to measure the free carrier concen...
In 1879, while a graduate student under Henry Rowland at the Physics Department of The Johns Hopkins...
The Hall mode of operation utilizes a signal derived from the magnetic field of an experimental magn...
A circuit with only resistors and unity gain amplifiers can be proven to be equivalent to the Ricket...
A circuit with only resistors and unity gain amplifiers can be proven to be equivalent to the Ricket...
A Hall-effect device has been designed and tested with both voltage contacts on one side of the Hall...
The principle of the Hall effect and its application to the characterization of semiconductors are d...
The Hall effect is the generation of a transverse electromotive force in a sample carrying an electr...
This project deals with the development of a computer interfacing technique for the study of Hall ef...
AbstractThe quantitative measurement of carrier concentrations and mobilities is of vital importance...
Silicon Hall plates show an offset of a few millitesla. A large portion of this offset is caused by ...
Now Hall Effect devices are used in many technical applications, but the full effect description is ...
This is a study of the behavior of a Hall Effect device by theoretical and experimental methods to...
A purely electronic four-quadrant analog multiplier of wide bandwidth and good accuracy has always b...
Experiments relevant to the development an integrated Hall effect sensor have been performed. Carrie...
The Hall Effect has long been the standard experimental technique to measure the free carrier concen...
In 1879, while a graduate student under Henry Rowland at the Physics Department of The Johns Hopkins...
The Hall mode of operation utilizes a signal derived from the magnetic field of an experimental magn...
A circuit with only resistors and unity gain amplifiers can be proven to be equivalent to the Ricket...
A circuit with only resistors and unity gain amplifiers can be proven to be equivalent to the Ricket...
A Hall-effect device has been designed and tested with both voltage contacts on one side of the Hall...
The principle of the Hall effect and its application to the characterization of semiconductors are d...
The Hall effect is the generation of a transverse electromotive force in a sample carrying an electr...
This project deals with the development of a computer interfacing technique for the study of Hall ef...
AbstractThe quantitative measurement of carrier concentrations and mobilities is of vital importance...
Silicon Hall plates show an offset of a few millitesla. A large portion of this offset is caused by ...