In this paper, we empirically investigate the retention performance of organic non-volatile floating gate memory devices with CdSe nanoparticles (NPs) as charge trapping elements. Core-structured CdSe NPs or core-shell-structured ZnS/CdSe NPs were mixed in PMMA and their performance in pentacene based device was compared. The NPs and self-organized thin tunneling PMMA inside the devices exhibited hysteresis by trapping hole during capacitance-voltage characterization. Despite of core-structured NPs showing a larger memory window, the retention time was too short to be adopted by an industry. By contrast core-shell structured NPs showed an improved retention time of ??10000 seconds than core-structure NCs. Based on these results and the ener...
Nonvolatile memory devices are one of the most important components in modern electronic devices. Ma...
CdS/PbS core-shell nanoparticles are grown via ion-exchange reaction route. Devices based on such na...
High-performance, non-volatile, floating nanodot gate memories (FNGMs) based on single CdS nanobelts...
This paper investigates the charge trapping mechanism and electrical performance of CdSe nanocrystal...
Organic memory devices based on CdSe nanoparticles (NPs) embedded in polymethylmethacrylate (PMMA) i...
Organic memory devices based on CdSe nanoparticles (NPs) embedded in polymethylmethacrylate (PMMA) i...
The electrical charging/discharging phenomena in organic memory based on the PMMAþCdSe nano-particle...
Nonvolatile memory devices were fabricated with core-shell CdTe-CdSe nanoparticles embedded in a pol...
A non-volatile floating gate memory device containing well-ordered Au nanoparticles (NPs) is fabrica...
Nonvolatile memory devices based on CdTe and CdTe-CdSe core-shell nanoparticles embedded in a poly(m...
Organic memories have a simple device design, offering the potential of uncomplicated integration an...
Thesis (M. Eng. and S.B.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering an...
[[abstract]]A semiconductor memory with nanocrystal embedded in the gate dielectric was proposed to ...
Nano-floating gate memory (NFGM) devices are transistor-type memory devices that use nanostructured ...
In this study, an organic memory structure having citrate-capped silicon nanoparticles (Si NPs) self...
Nonvolatile memory devices are one of the most important components in modern electronic devices. Ma...
CdS/PbS core-shell nanoparticles are grown via ion-exchange reaction route. Devices based on such na...
High-performance, non-volatile, floating nanodot gate memories (FNGMs) based on single CdS nanobelts...
This paper investigates the charge trapping mechanism and electrical performance of CdSe nanocrystal...
Organic memory devices based on CdSe nanoparticles (NPs) embedded in polymethylmethacrylate (PMMA) i...
Organic memory devices based on CdSe nanoparticles (NPs) embedded in polymethylmethacrylate (PMMA) i...
The electrical charging/discharging phenomena in organic memory based on the PMMAþCdSe nano-particle...
Nonvolatile memory devices were fabricated with core-shell CdTe-CdSe nanoparticles embedded in a pol...
A non-volatile floating gate memory device containing well-ordered Au nanoparticles (NPs) is fabrica...
Nonvolatile memory devices based on CdTe and CdTe-CdSe core-shell nanoparticles embedded in a poly(m...
Organic memories have a simple device design, offering the potential of uncomplicated integration an...
Thesis (M. Eng. and S.B.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering an...
[[abstract]]A semiconductor memory with nanocrystal embedded in the gate dielectric was proposed to ...
Nano-floating gate memory (NFGM) devices are transistor-type memory devices that use nanostructured ...
In this study, an organic memory structure having citrate-capped silicon nanoparticles (Si NPs) self...
Nonvolatile memory devices are one of the most important components in modern electronic devices. Ma...
CdS/PbS core-shell nanoparticles are grown via ion-exchange reaction route. Devices based on such na...
High-performance, non-volatile, floating nanodot gate memories (FNGMs) based on single CdS nanobelts...