Nanostructured ZrO2 thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO2 films were investigated. The ZrO2 films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 degrees C. De...
Yttria stabilized zirconia (YSZ), the most significant material of electrolytes in solid oxide fuel ...
Abstracts High-k metal oxide films are vital for the future development of microelectronics technolo...
Thin ZrO2 films are of high interest as high-k material in dynamic random access memory (DRAM), embe...
Zirconium oxide (ZrO2) films were investigated as a potential replacement for silicon dioxide gate d...
Weakly agglomerated ZrO2 nanopowders stabilized by complex oxides of Sc2O3 and CeO2 were synthesized...
Producción CientíficaThin mixed and nanolaminate films of ZrO2 and Al2O3 were grown by atomic layer ...
This work demonstrates a nanoscale zirconia layer coated by atomic layer deposition (ALD) with only ...
In this work, we studied an atomic layer deposition (ALD) process of ZrO2 with the precursors of tet...
Thin films of ZrO2 have been deposited by ALD on Si(100) and SIMOX using two different metalorganic ...
Yttria-stabilized zirconia thin films with restrained columnar grains were deposited by modifying th...
This project has three main goals: Thin Films Studies, Preparation of Graded Porous Substrates and B...
Dense, crack-free thin films (<5 mu m) of the nanostructured scandia-zirconia system (Sc2O3:ZrO2) st...
Solid Oxide Fuel Cells are devices that use a series of electrochemical reactions to convert chemica...
Thin solid films consisting of ZrO2 and Fe2O3 were grown by atomic layer deposition (ALD) at 400 deg...
Thin mixed and nanolaminate films of ZrO2 and Al2O3 were grown by atomic layer deposition from the c...
Yttria stabilized zirconia (YSZ), the most significant material of electrolytes in solid oxide fuel ...
Abstracts High-k metal oxide films are vital for the future development of microelectronics technolo...
Thin ZrO2 films are of high interest as high-k material in dynamic random access memory (DRAM), embe...
Zirconium oxide (ZrO2) films were investigated as a potential replacement for silicon dioxide gate d...
Weakly agglomerated ZrO2 nanopowders stabilized by complex oxides of Sc2O3 and CeO2 were synthesized...
Producción CientíficaThin mixed and nanolaminate films of ZrO2 and Al2O3 were grown by atomic layer ...
This work demonstrates a nanoscale zirconia layer coated by atomic layer deposition (ALD) with only ...
In this work, we studied an atomic layer deposition (ALD) process of ZrO2 with the precursors of tet...
Thin films of ZrO2 have been deposited by ALD on Si(100) and SIMOX using two different metalorganic ...
Yttria-stabilized zirconia thin films with restrained columnar grains were deposited by modifying th...
This project has three main goals: Thin Films Studies, Preparation of Graded Porous Substrates and B...
Dense, crack-free thin films (<5 mu m) of the nanostructured scandia-zirconia system (Sc2O3:ZrO2) st...
Solid Oxide Fuel Cells are devices that use a series of electrochemical reactions to convert chemica...
Thin solid films consisting of ZrO2 and Fe2O3 were grown by atomic layer deposition (ALD) at 400 deg...
Thin mixed and nanolaminate films of ZrO2 and Al2O3 were grown by atomic layer deposition from the c...
Yttria stabilized zirconia (YSZ), the most significant material of electrolytes in solid oxide fuel ...
Abstracts High-k metal oxide films are vital for the future development of microelectronics technolo...
Thin ZrO2 films are of high interest as high-k material in dynamic random access memory (DRAM), embe...