Coupled three-dimensional GeSi quantum dot crystals (QDCs) are realized by multilayer growth of quantum dots (QDs) on patterned SOI (001) substrates. Photoluminescence spectra of these QDCs show non-phonon (NP) recombination and its transverse-optical (TO) phonon replica of excitons in QDs. With increasing excitation power, peak energies of both the NP and TO peaks remain nearly constant and the width of the TO peak decreases. These anomalous features of the PL peaks are attributed to miniband formation due to strong coupling of the holes and the emergence of quasioptical phonon modes due to periodic scatters in ordered GeSi QDs
Non-classical light sources offer a myriad of possibilities in both fundamental science and commerci...
The generally accepted notions about the formation mechanisms for germanium islands with nanometer-s...
Non-classical light sources offer a myriad of possibilities in both fundamental science and commerci...
We investigate the optical properties of ordered Ge quantum dots (QDs) by means of micro-photolumine...
We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxi...
By combining extreme ultraviolet interference lithography with Si/Ge molecular beam epitaxy, densely...
Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the pho...
The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pu...
The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pu...
We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive...
Low-temperature epitaxial growth of Si-Ge heterostructures opens possibilities for synthesizing ver...
Small-size, high-density, and vertical-ordering Ge quantum dots are observed in strained Si/Ge short...
Cataloged from PDF version of article.We report enhanced sensitization of silicon through nonradiati...
The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (1...
The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (1...
Non-classical light sources offer a myriad of possibilities in both fundamental science and commerci...
The generally accepted notions about the formation mechanisms for germanium islands with nanometer-s...
Non-classical light sources offer a myriad of possibilities in both fundamental science and commerci...
We investigate the optical properties of ordered Ge quantum dots (QDs) by means of micro-photolumine...
We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxi...
By combining extreme ultraviolet interference lithography with Si/Ge molecular beam epitaxy, densely...
Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the pho...
The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pu...
The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pu...
We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive...
Low-temperature epitaxial growth of Si-Ge heterostructures opens possibilities for synthesizing ver...
Small-size, high-density, and vertical-ordering Ge quantum dots are observed in strained Si/Ge short...
Cataloged from PDF version of article.We report enhanced sensitization of silicon through nonradiati...
The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (1...
The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (1...
Non-classical light sources offer a myriad of possibilities in both fundamental science and commerci...
The generally accepted notions about the formation mechanisms for germanium islands with nanometer-s...
Non-classical light sources offer a myriad of possibilities in both fundamental science and commerci...