Differential scanning calorimetry (DSC) is widely used to study the stability of amorphous solids, characterizing the kinetics of crystallization close to the glass-transition temperature Tg. We apply ultrafast DSC to the phase-change material Ge2Sb2Te5 (GST) and show that if the range of heating rates is extended to more than 104 K s-1, the analysis can cover a wider temperature range, up to the point where the crystal growth rate approaches its maximum. The growth rates that can be characterized are some four orders of magnitude higher than in conventional DSC, reaching values relevant for the application of GST as a data-storage medium. The kinetic coefficient for crystal growth has a strongly non-Arrhenius temperature dependence, reveal...
The study of crystal growth in phase-change thin films is of crucial importance to improve our under...
Phase change materials are widely considered for application in nonvolatile memories because of thei...
Glass-forming materials are employed in information storage technologies making use of the transitio...
The crystallization kinetics of phase-change materials (PCMs) entails a crucial aspect of phase-chan...
The crystallization kinetics of phase-change materials (PCMs) entails a crucial aspect of phase-chan...
Controlling crystallization kinetics is key to overcome the temperature–time dilemma in phase change...
Although nanostructured phase-change materials (PCMs) are considered as the building blocks of next-...
This is the final version of the article. Available from AIP Publishing via the DOI in this record.T...
Phase-change random-access memory relies on the reversible crystalline-glassy phase change in chalco...
Phase-change random-access memory relies on the reversible crystalline-glassy phase change in chalco...
Phase-change materials are widely used in non-volatile computer memories, and in arithmetic and logi...
Chalcogenide phase-change materials combine a remarkable set of properties that makes them promising...
Crystallization kinetics of phase change materials (PCMs) at high temperatures is of key importance ...
Phase-change materials exhibit fast and reversible transitions between an amorphous and a crystallin...
Both Ag- and In-doped Sb2Te (AIST) and phase change materials located along the GeTe-Sb2Te3 pseudo-b...
The study of crystal growth in phase-change thin films is of crucial importance to improve our under...
Phase change materials are widely considered for application in nonvolatile memories because of thei...
Glass-forming materials are employed in information storage technologies making use of the transitio...
The crystallization kinetics of phase-change materials (PCMs) entails a crucial aspect of phase-chan...
The crystallization kinetics of phase-change materials (PCMs) entails a crucial aspect of phase-chan...
Controlling crystallization kinetics is key to overcome the temperature–time dilemma in phase change...
Although nanostructured phase-change materials (PCMs) are considered as the building blocks of next-...
This is the final version of the article. Available from AIP Publishing via the DOI in this record.T...
Phase-change random-access memory relies on the reversible crystalline-glassy phase change in chalco...
Phase-change random-access memory relies on the reversible crystalline-glassy phase change in chalco...
Phase-change materials are widely used in non-volatile computer memories, and in arithmetic and logi...
Chalcogenide phase-change materials combine a remarkable set of properties that makes them promising...
Crystallization kinetics of phase change materials (PCMs) at high temperatures is of key importance ...
Phase-change materials exhibit fast and reversible transitions between an amorphous and a crystallin...
Both Ag- and In-doped Sb2Te (AIST) and phase change materials located along the GeTe-Sb2Te3 pseudo-b...
The study of crystal growth in phase-change thin films is of crucial importance to improve our under...
Phase change materials are widely considered for application in nonvolatile memories because of thei...
Glass-forming materials are employed in information storage technologies making use of the transitio...