Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealing
- Liu, X. Q.
- Lu, W.
- Li, Z. F.
- Chen, Y. D.
- Shen, S. C.
- Fu, Y.
- Willander, M.
- Tan, H. H.
- Yuan, S.
- Jagadish, C.
- Zou, J.
- Cockayne, D. J. H.
DOIAbstract
Single Al0.5Ga0.5As/GaAs V-groove quantum wires (QWR) modified by selective implantation and rapid thermally annealing were investigated by spatially resolved microphotoluminescence (micro-PL). The PL from the necking region was clearly observed at room temperature. Optical properties of QWR and the adjacent quantum well structures were strongly degraded by the implantation. The recovery properties of the PL signals from all the structures were dependent on the implantation dose. A critical dose of 1 x 10(13) cm(-2) was found for the selective implantation, over which the PL from the necking region could not be recovered. Also the blueshifts of QWR and the necking-region PL peaks were observed for all the annealed samples. This blueshift is...
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